Development of Flux-Free Reflow Soldering Process Using Hydrogen Radicals

Suenaga, M.; Nakamori, Takashi; Hirakawa, Daisuke; Ohno, Yasuhide; Hagihara, Taizo; Kagami, Johji; Takeuchi, Tatsuya

doi:10.1109/ectc.2005.1441347

Cited by 5 publications

(1 citation statement)

References 2 publications

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“…It is therefore necessary to develop a new, fluxless reflow process for these next-generation solder bumps. Hydrogen plasma reflow has been investigated as a suitable process [4,5]. However, there are few reports on the characteristics of MOSFETs after hydrogen plasma reflow.…”

Section: Introductionmentioning

confidence: 98%

Effects of Electroless Ni/Sn Bump Formation using Hydrogen-Plasma Reflow on the Electrical Characteristics of MOSFETs

Ikeda

Kimiya²,

Fukunaga³

et al. 2007

2007 9th Electronics Packaging Technology Conference

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Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.

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Section: Introductionmentioning

confidence: 98%