Development of ferroelectric RAM (FRAM) for mass production

Eshita, Takashi; Wang, Wensheng; Nakamura, K.; Mihara, Satoru; Saito, Hiroyoshi; Hikosaka, Yukinobu; Inoue, Kouichi; Kawashima, Seiichiro; Yamaguchi, H.; Nomura, Koji

doi:10.1109/icept.2014.6918721

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…The ferroelectric materials of the two tested devices is lead Zirconatetitanate (PZT). Based on [11], we deduce that Fujitsu FRAM is built using 1T/1C structure, while the architecture of the Cypress semiconductor FRAM is probably 2T/2C.…”

Section: Ferroelectric Ram Technologymentioning

confidence: 99%

Evaluation of Total Ionizing Dose Effects on Commercial FRAMs

Slimani

Armani

Gaillard³

2018

2018 IEEE Nuclear &Amp; Space Radiation Effects Conference (NSREC 2018)

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This work evaluates the sensitivity of two commercial ferroelectric random access memories to total ionizing dose. Functional failure analysis and current measurements have been performed as a function of total ionizing dose. Results of testing under Co-60 gamma radiation show a huge difference of radiation hardness levels between FRAM references and give an idea of the most sensitive part causing failure on each memory chip. Annealing responses at room temperature have been reported.

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Section: Ferroelectric Ram Technologymentioning

confidence: 99%

Evaluation of Total Ionizing Dose Effects on Commercial FRAMs

Slimani

Armani

Gaillard³

2018

2018 IEEE Nuclear &Amp; Space Radiation Effects Conference (NSREC 2018)

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“…Ramtron International Corporation presented the first commercial FRAM in 1988 [8]. FRAM is an advanced non-volatile memory that marketed earlier than its counterparts like MRAM, PCRAM, ReRAM [9].…”

Section: Electronic Memory Typesmentioning

confidence: 99%

A Survey of Hybrid Main Memory Architectures

Çavdar

Avcı²,

Koca

et al. 2019

Sakarya University Journal of Science

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Rapidly evolving technology, increased internet speed and capacity, and the widespread use of mobile technologies have increased the demands for faster applications and less power consumption of modern electronic systems. In modern electronic systems, RAM is as effective as CPU regarding performance and power consumption. Although DRAM is the most used types of main memory today, it has been insufficient in terms of provide increasing demands. One of the issues to be addressed is to improve DRAM in terms of performance and power consumption. Another study to address this increasing demand is the development of hybrid main memory architectures. Hybrid Main Memory is one of the most recent studies on RAM. In this research, we investigate hybrid main memory systems for a more efficient main memory architecture.

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Development of ferroelectric RAM (FRAM) for mass production

Cited by 2 publications

References 3 publications

Evaluation of Total Ionizing Dose Effects on Commercial FRAMs

Evaluation of Total Ionizing Dose Effects on Commercial FRAMs

A Survey of Hybrid Main Memory Architectures

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