Evaluation of Total Ionizing Dose Effects on Commercial FRAMs

Abstract

This work evaluates the sensitivity of two commercial ferroelectric random access memories to total ionizing dose. Functional failure analysis and current measurements have been performed as a function of total ionizing dose. Results of testing under Co-60 gamma radiation show a huge difference of radiation hardness levels between FRAM references and give an idea of the most sensitive part causing failure on each memory chip. Annealing responses at room temperature have been reported.