Development of Double-Sided Full-Passing-Column 3D Sensors at FBK

Giacomini, G.; Bagolini, Alvise; Boscardin, M.; Betta, G.-F. Dalla; Mattedi, F.; Povoli, Marco; Vianello, E.; Zorzi, N.

doi:10.1109/tns.2013.2262951

Cited by 53 publications

(66 citation statements)

References 36 publications

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“…Like for every 3D sensor fabrication, the most delicate steps within this production were the column etchings by DRIE. The etching recipes had been previously optimized with dedicated tests [6], so that results were good. Figure 2b shows a few pictures from Scanning Electron Microscope (SEM).…”

Section: Process Characterizationmentioning

confidence: 99%

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First production of new thin 3D sensors for HL-LHC at FBK

et al. 2017

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Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the "Phase 2" High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2×10 16 n eq .cm -2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50×50 or 25×100 µm 2 cell size), thinner active region (~100 µm), narrower columnar electrodes (~5µm diameter) with reduced inter-electrode spacing (~30 µm), and very slim edges (~100 µm). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6" substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GΩ even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

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Section: Process Characterizationmentioning

confidence: 99%

“…reproduce the basic 3D cell layouts of all types of large pixel and strip sensors, but all columns of the same type are shorted together by a metal grid to obtain a 2-electrode device [6].…”

Section: Wafer Layoutmentioning

confidence: 99%

First production of new thin 3D sensors for HL-LHC at FBK

et al. 2017

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“…Nevertheless, remarkab exceeding 50% at 150 V, is obtain pixel. also including surface fF for the 50×50 μm 2 and ainly due to the different e breakdown voltage before the ratio of the signal after was simulated using the 3-fied as described in [10] Besides allowing for high radiation hardness, the small inter-electrode distance also allows to minimize the dead area achievable by using the slim-edge concept introduced with the ATLAS IBL pixels [1,7]. This design is based on an ohmic column fence that confines the depletion region spreading from the outermost junction columns so that it does not reach the highly damaged cut region [11].…”

Section: Design Aspects and Tcad Simulationsmentioning

confidence: 99%

“…Another problem with thin sensors is their compatibility with the fabrication facility and with the bump bonding process. For the ATLAS IBL, FBK used a double-sided fabrication technology [7] that proved to offer several advantages in terms of process complexity, overall fabrication times, and sensor assembly within a system, mainly due to the absence of a handle wafer. Nevertheless, it is not easy to process a wafer thinner than 200 μm without a handle wafer, and this problem is even more critical for 6"-diameter wafers, to which the FBK pilot line was upgraded in 2013.…”

Section: Introductionmentioning

confidence: 99%

Development of new 3D pixel sensors for phase 2 upgrades at LHC

Betta

Boscardin

Mendicino

et al. 2015

2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

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-We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50×50 or 25×100 µm 2 pixel size) and extreme radiation hardness (up to a fluence of 2×10 16 n eq cm -2 ), thinner 3D sensors (~100 µm) with electrodes having narrower size (~ 5 µm) and reduced spacing (~ 30 µm) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6" wafers.

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“…Two vendors have been fabricating the 3D sensors for IBL with different designs: CNM (Centro Nacional de Microelectrónica, Barcelona, Spain) [6] and FBK (Fondazione Bruno Kesler, Trento, Italy) [7]. The main differences between the two designs are:…”

Section: The Slim-edged Afp Prototypesmentioning

confidence: 99%

Characterization of silicon 3D pixel detectors for the ATLAS Forward Physics experiment

Paz

Cavallaro

Grinstein

et al. 2015

2015 4th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and Their Applications (ANIMMA

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Abstract-The ATLAS Forward Physics (AFP) project aims to measure protons scattered under a small angle from the pp collisions in ATLAS. In order to perform such measurements, a new silicon tracker, together with a time-of-flight detector for pile-up removal, are planned to be installed at ∼210 m away from the interaction point and at 2-3 mm away from the LHC proton beam. To cope with such configuration and maximize the physics outcome, the tracker has to fulfil three main requirements: endure highly non-uniform radiation doses, due to the very inhomogeneous beam profile, have slim and efficient edges to improve the acceptance of the tracker, and provide good position resolution.Recent laboratory and beam test characterization results of AFP prototypes will be presented. Slim-edged 3D pixel detectors down to 100-200 µm were studied and later non-uniformly irradiated (with a peak fluence of several 10 15 neq/cm 2 ) to determine the fulfilment of the AFP requirements.

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Development of Double-Sided Full-Passing-Column 3D Sensors at FBK

Cited by 53 publications

References 36 publications

First production of new thin 3D sensors for HL-LHC at FBK

First production of new thin 3D sensors for HL-LHC at FBK

Development of new 3D pixel sensors for phase 2 upgrades at LHC

Characterization of silicon 3D pixel detectors for the ATLAS Forward Physics experiment

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