Development of diamond films for particle detector applications

Behnke, T.; Oh, A.; Wagner, Albrecht; Zeuner, Wolfram Dietrich; Bluhm, Andrea; Klages, Claus‐Peter; Paul, M.; Schäfer, Lothar

doi:10.1016/s0925-9635(98)00238-6

Cited by 43 publications

(17 citation statements)

References 3 publications

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“…5,6 However, despite the large diffusion of the procedure, few authors have carefully studied the physical grounds of the pumping process in order to discriminate its effect on electron and hole propagation in the detection process, [7][8][9][10][11][12] so that very little is known to date about the contribution of each carrier type to the transport mechanism in the as-grown and pumped states.…”

Section: Infm-dipartimento DImentioning

confidence: 99%

Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond

Marinelli

Pucella

Tucciarone

et al. 2003

Applied Physics Letters

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A simple technique for measuring the electron and hole mean drift distance in chemical vapor deposition polycrystalline diamond in the as-grown and in the so-called pumped state obtained by 90 Sr ␤-particle irradiation is presented. To this purpose, the efficiency of a diamond-based particle detector was measured using a 5.5-MeV 241 Am ␣-particle source. In particular, two different experimental setups were specifically designed and realized in order to perform a systematic study of the device efficiency as a function of the ␣-particle penetration depth, both in the positive and negative bias polarization. In the first setup, air is used as an absorbing layer in order to change the energy of the impinging ␣ particles, while in the second one, the measurements were performed in vacuum and the incidence angle was varied in the 0°-80°range. The advantages of the latter setup are evidenced. The theoretical formula for the mean drift distances of carriers is derived using a properly modified Hecht model, and fitted to the data, allowing a separate evaluation of the charge collection distances of each carrier type ( e ϭ e e E and h ϭ h h E). The obtained results unambiguously show that the pumping process is much more effective on hole conduction, h being much greater than e in the pumped state. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1586475͔Chemical vapor deposition ͑CVD͒ diamond has been shown to be a suitable material for a great number of technological applications, such as particle and UV radiation detectors, 1-4 and even more so if it is driven in the so-called pumped state by ionizing irradiation, which is known to drastically improve the transport properties of synthetic diamond. 5,6 However, despite the large diffusion of the procedure, few authors have carefully studied the physical grounds of the pumping process in order to discriminate its effect on electron and hole propagation in the detection process, [7][8][9][10][11][12] so that very little is known to date about the contribution of each carrier type to the transport mechanism in the as-grown and pumped states.The aim of the present work is to carefully separate and evaluate the charge collection distance of electrons and holes in polycrystalline CVD diamond, both in the as-grown and pumped states, thus giving a better insight on the transport properties of such material. To this purpose, a 130-m-thick film was grown in our labs by microwave plasma chemical vapor deposition and a particle detector was realized and tested with a 241 Am ␣-particle source, as described elsewhere. 13 The mean drift distance of each carrier type can be separately obtained by systematically studying the efficiency of the device as a function of the incident particle penetration depth G, and by analyzing the experimental curves in the framework of a properly modified Hecht model. Indeed, the contribution of one type of carrier ͑de-pending on bias polarity͒ gradually decreases as the penetration depth is reduced.A crucial point of this work was the design and r...

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Section: Infm-dipartimento DImentioning

confidence: 99%

Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond

Marinelli

Pucella

Tucciarone

et al. 2003

Applied Physics Letters

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“…This can be achieved by irradiating the material under a 50 kV X-ray tube at a typical dose of 10 Gy. This procedure called the ''priming" or ''pumping" effect is known to improve dramatically the collection efficiency [17]. The progressive increase of the detector sensitivity can be probed during X-ray irradiation and is shown in the insert of Fig.…”

Section: Defectsmentioning

confidence: 99%

Particle and Radiation Detectors Based on Diamond

Bergonzo

Tromson

Mer

et al. 2001

phys. stat. sol. (a)

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CVD diamond is a remarkable material for the fabrication of particle and photon radiation detectors. The improvement of the electronic properties of the material has been under intensive investigations and led to the development of a few applications that are addressing specific industrial needs. In particular, we have used diamond layers for industrial applications where it exhibits attractive characteristics as compared with other materials: e.g., radiation and corrosion hardness for a-counters or high gamma-meters at high fluxes; high transparency to low energy X-rays for synchrotron beam line monitoring devices, etc. These specific properties can motivate the use of diamond even though the detection properties remain relatively poor. Indeed, one inherent problem with diamond is the presence of defect levels that are altering the detection characteristics. These are observed in all CVD materials but also in very high quality natural diamonds. They result in unstable responses and carrier losses. Also, it has been observed that high sensitivities may result from the progressive filling of deep levels, e.g. pumping effects, with a detrimental effect on the stability and the response time. Also, the polycrystalline nature is somewhat detrimental as it induces significant non-uniformities of the device response with respect to the position of interaction. We have investigated these features by imaging the response of CVD diamond using a micrometer size focused X-ray beam. The comparison with the grain structure showed that it has a strong influence on the field distribution. We present here recent developments studied at CEA in Saclay for the optimisation of the material with respect to the specific requirements of several applications. They include radiation hard counters; X-ray intensity, shape and beam position monitors, solar blind photodetectors, and high dose rate gamma-meters.

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“…The high resistivity of diamond allows the realisation of particle detectors in the form of simple two-terminal devices with a metal-semiconductor-metal (MSM) structure [4,6,7]. The principle scheme of an MSM diamond detector is displayed in Fig.…”

Section: Diamond-based Particle Detectorsmentioning

confidence: 99%

Role of the film texturing on the response of particle detectors based on CVD diamond

Faggio

Messina

Santangelo

et al. 1999

Microsystem Technologies

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Recent improvements in the quality of diamond films grown by Chemical Vapour Deposition (CVD) have made synthetic diamond a very attractive material for detection applications. In this paper, polycrystalline diamond films synthesised by microwave plasma enhanced CVD using a CH 4 -CO 2 gas mixture, previously investigated as particle detectors, have been characterised by X-ray diffraction and Raman spectroscopy. The detector response was measured in vacuo under irradiation with 5.5 MeV -particle from a 241Am source. A systematic study of the influence of the film structural properties on the detector performance has been carried out by changing the methane concentration in the growth plasma and the deposition temperature. The existence of a correlation between growth conditions, film texturing and detector performance has been demonstrated. Independently of the substrate temperature, (1 0 0) orientated films exhibit the lowest detection efficiencies. The meas ured collection distances are smaller than the average grain sizes and seem to be limited by trapping centres within the grains. These results are confirmed by Raman analysis.

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Development of diamond films for particle detector applications

Cited by 43 publications

References 3 publications

Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond

Experimental determination of electron and hole mean drift distance: Application to chemical vapor deposition diamond

Particle and Radiation Detectors Based on Diamond

Role of the film texturing on the response of particle detectors based on CVD diamond

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