2015
DOI: 10.1016/j.radphyschem.2015.05.025
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Development of compact high efficiency microstructured semiconductor neutron detectors

Abstract: Semiconductor diode detectors coated with neutron reactive materials are generally fashioned as planar diodes coated with 10 B, 6 LiF, or Gd. Planar detectors coated with 10 B or 6 LiF are limited to less than 5% intrinsic thermal neutron detection efficiency. Detectors coated with Gd can achieve higher efficiencies, but the low-energy signatures are problematic in the presence of background radiations.

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Cited by 27 publications
(7 citation statements)
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“…From the previous discussion, it can be seen that 10 B has a higher probability of capturing thermal neutrons but produces lower secondary particle energy [35], so the 10 B-type SiC neutron detector has a smaller structure size parameter [9], [13], [32], [33], [37]. However, 6 LiF has a lower probability of capturing thermal neutrons but produces higher secondary particle energy [35], so the structure size parameter of 6 LiF type SiC neutron detectors is larger [9], [13], [32], [33], [37]. If 10 B is backfilled into a trench with a width of T B , and 6 LiF is backfilled into a trench with a width of T LiF , the properties of 10 B and 6 LiF to react with thermal neutrons can be fully utilized.…”
Section: Double-trench Sic Neutron Detector a Double-trench Detector ...mentioning
confidence: 98%
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“…From the previous discussion, it can be seen that 10 B has a higher probability of capturing thermal neutrons but produces lower secondary particle energy [35], so the 10 B-type SiC neutron detector has a smaller structure size parameter [9], [13], [32], [33], [37]. However, 6 LiF has a lower probability of capturing thermal neutrons but produces higher secondary particle energy [35], so the structure size parameter of 6 LiF type SiC neutron detectors is larger [9], [13], [32], [33], [37]. If 10 B is backfilled into a trench with a width of T B , and 6 LiF is backfilled into a trench with a width of T LiF , the properties of 10 B and 6 LiF to react with thermal neutrons can be fully utilized.…”
Section: Double-trench Sic Neutron Detector a Double-trench Detector ...mentioning
confidence: 98%
“…Thus, the output response of the semiconductor neutron detector indirectly realizes the detection of neutrons. Several groups have made substantial early contributions to the development of Si-based neutron detectors [9], [10], [11], [12], [13], [14], [15]. Typically, the thermal neutron intrinsic detection efficiency for thin-film-coated detectors is lower than 5% [6], [10], [16].…”
Section: Introductionmentioning
confidence: 99%
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“…Crystalline density of 6 LiF is 2.55 g cm -3 , however, the method by which the 6 LiF powder is filled into the microcavities, a packing fraction of approximately 35% is achieved. The backfilled trenches are repeated every 30 µm, with the remaining volume filled with Si, as shown in Figure 8 (Shultis and McGregor, 2009;McGregor et al, 2015). Neutrons intersecting the 6 LiF trenches have some probability of absorption by the 6 Li nucleus based on the angle of impact and the neutron absorption cross section for the given energy of the neutron.…”
Section: Neutron Sensor Modelingmentioning
confidence: 99%
“…To meet these demands, we have developed a semiconductor-based lowenergy neutron detection system capable of differentiating thermal and epithermal neutrons. The system uses multiple microstructured semiconductor neutron detectors (MSNDs) arranged into a planar-type detector array (McGregor et al 2015;Ochs et al 2018). We experimentally measured the performance of three different configurations of the low-energy neutron detection system for spaceflight application, which resulted in a functioning sensor system prototype that is able to detect and differentiate thermal and epithermal neutrons.…”
Section: Introductionmentioning
confidence: 99%