Development of atmospheric pressure CVD processes for highquality transparent conductive oxides

Graaf, A. de; Deelen, J. van; Poodt, Paul; Mol, Ton van; Spee, Karel; Grob, F.; Kuypers, A. D.

doi:10.1016/j.egypro.2010.07.008

Cited by 22 publications

(15 citation statements)

References 17 publications

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“…Recently solar cells have been developed that use higher wavelength light. For CuInSe 2 solar cells, the cut-off wavelength is higher than 1200 nm [27]. In addition, PbS solar cells using high wavelengths up to 1250 nm have been reported [29].…”

Section: Enhanced Transparency In Near Infrared Regionmentioning

confidence: 99%

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Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

Wang

Shi

Zhong

et al. 2015

Solar Energy Materials and Solar Cells

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Section: Enhanced Transparency In Near Infrared Regionmentioning

confidence: 99%

“…1). For the use of silicon solar cells, the wavelength range up to 1100 nm is important, because it corresponds with the band gap of Si [27,28]. Recently solar cells have been developed that use higher wavelength light.…”

Section: Enhanced Transparency In Near Infrared Regionmentioning

confidence: 99%

Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

Wang

Shi

Zhong

et al. 2015

Solar Energy Materials and Solar Cells

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“…The latter combination of thin SnO 2 layers on glass is meant for the production of a-Si thin film solar cells. Deposition of the samples was performed at TNO in the Netherlands using an industrial process [21].…”

Section: Samplesmentioning

confidence: 99%

Optical and electrical properties of SnO₂thin films after ultra-short pulsed laser annealing

et al. 2013

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Ultra-short pulsed laser sources, with pulse durations in the ps and fs regime, are commonly exploited for cold ablation. However, operating ultra-short pulsed laser sources at fluence levels well below the ablation threshold allows for fast and selective thermal processing. The latter is especially advantageous for the processing of thin films. A precise control of the heat affected zone, as small as tens of nanometers, depending on the material and laser conditions, can be achieved. It enables the treatment of the upper section of thin films with negligible effects on the bulk of the film and no thermal damage of sensitive substrates below. By applying picosecond laser pulses, the optical and electrical properties of 900 nm thick SnO 2 films, grown by an industrial CVD process on borofloat ® -glass, were modified. The treated films showed a higher transmittance of light in the visible and near infra-red range, as well as a slightly increased electrical sheet resistance. Changes in optical properties are attributed to thermal annealing, as well as to the occurrence of LaserInduced Periodic Surface Structures (LIPSSs) superimposed on the surface of the SnO 2 film. The small increase of electrical resistance is attributed to the generation of laser induced defects introduced during the fast heating-quenching cycle of the film. These results can be used to further improve the performance of SnO 2 -based electrodes for solar cells and/or electronic devices.

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“…6). The high concentration of carbon in the as-deposited sample cannot be simply attributed to atmospheric contamination, but must have been caused by the carbon-rich precursor gases used during the CVD process in the last deposition stage of the SnO 2 layers [16]. Moreover, the crystalline structure of the outermost layers would not explain atmospheric contamination.…”

Section: Stoichiometry and Chemical Compositionmentioning

confidence: 99%

“…This combination of a thin SnO 2 layer on glass is used for the production of silicon thin film solar cells. Deposition of the samples was performed at TNO in the Netherlands using an industrial process [16].…”

Section: Samplesmentioning

confidence: 99%

Annealing of SnO_2 thin films by ultra-short laser pulses

Scorticati¹,

Illiberi²,

Bor³

et al. 2014

Opt. Express

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Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO 2 thin films by means of thermal processing. Industrial grade SnO 2 films exhibited improved optical properties after picosecond laser irradiation, at the expense of a slightly increased sheet resistance [Proc. SPIE 8826, 88260I (2013)]. The figure of merit φ = T 10 / R sh was increased up to 59% after laser processing. In this paper we study and discuss the causes of this improvement at the atomic scale, which explain the observed decrease of conductivity as well as the observed changes in the refractive index n and extinction coefficient k. It was concluded that the absorbed laser energy affected the optoelectronic properties preferentially in the top 100-200 nm region of the films by several mechanisms, including the modification of the stoichiometry, a slight desorption of dopant atoms (F), adsorption of hydrogen atoms from the atmosphere and the introduction of laser-induced defects, which affect the strain of the film. . J. Chae, L. Jang, and K. Jain, "High-resolution, resistless patterning of indium-tinoxide thin films using excimer laser projection annealing process," Mater. Lett. 64(8), 948-950 (2010). 12. G. Haacke, "New figure of merit for transparent conductors," J. Appl. Phys. 47(9), 4086-4089 (1976

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Development of atmospheric pressure CVD processes for highquality transparent conductive oxides

Cited by 22 publications

References 17 publications

Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

Optical and electrical properties of SnO₂thin films after ultra-short pulsed laser annealing

Annealing of SnO_2 thin films by ultra-short laser pulses

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Development of atmospheric pressure CVD processes for highquality transparent conductive oxides

Cited by 22 publications

References 17 publications

Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

Morphology control of fluorine-doped tin oxide thin films for enhanced light trapping

Optical and electrical properties of SnO2thin films after ultra-short pulsed laser annealing

Annealing of SnO_2 thin films by ultra-short laser pulses

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Product

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Optical and electrical properties of SnO₂thin films after ultra-short pulsed laser annealing