2021 IEEE 71st Electronic Components and Technology Conference (ECTC) 2021
DOI: 10.1109/ectc32696.2021.00120
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Development of a Temporary Bonding Tape Having over 300 degC Thermal Resistance for Cu-Cu Direct Bonding

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Cited by 12 publications
(2 citation statements)
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“…The N 2 by-products produced by the tape ablated by a 355 nm laser can assist in the separation of wafer bonding pairs. The improved tape was developed for hybrid bonding, which has greater thermal stability, tensile modulus and other properties [90]. The wafers bonded by this adhesive were thinned from 725 µm to 25 µm, and the TTV value was only 3 µm.…”
Section: Laser Ablationmentioning
confidence: 99%
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“…The N 2 by-products produced by the tape ablated by a 355 nm laser can assist in the separation of wafer bonding pairs. The improved tape was developed for hybrid bonding, which has greater thermal stability, tensile modulus and other properties [90]. The wafers bonded by this adhesive were thinned from 725 µm to 25 µm, and the TTV value was only 3 µm.…”
Section: Laser Ablationmentioning
confidence: 99%
“…The dislocation or incomplete connection of the TSV leads to the degradation of chip performance or loss of function. Sekisui reported their temporary adhesive tape that could withstand over 300 • C, which is available for Cu-Cu bonding [90]. The glass-adhesive-wafer stack was heated on a hot plate at 300 • C for 30 min, and no delamination was observed after heating.…”
Section: Tsv and Cu-cu Bondingmentioning
confidence: 99%