Development of a Tabletop Setup for the Transient Current Technique Using Two-Photon Absorption in Silicon Particle Detectors

Wiehe, Moritz; Fernández, M.; Moll, M.; Montero, Raúl; Palomo, F.R.; Vila, I.; Muñoz-Marco, Héctor; Otgon, Viorel; Pérez-Millán, Pere

doi:10.1109/tns.2020.3044489

Cited by 16 publications

(18 citation statements)

References 13 publications

(16 reference statements)

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“…Good examples of such detectors are monolithic silicon pixel detectors [3,4], multipixel silicon LGAD detectors [5][6][7][8], detectors with 3D electrodes (silicon and diamond) [9,10], etc. Studying the charge transport in such structures is most frequently accomplished today by different variations of the TCT (transient current technique) technique, which uses laser light to create charge carriers in certain detector regions, generally through the small openings in electrodes that enable passage of light [11,12]. Other techniques are based on the induction of charge carriers from different radiation sources, such as electrons from accelerators, radioactive sources (e.g., betas from Sr90) or electron microscopy (SEM-EBIC) [13], focused X-rays from tube or synchrotron light, and finally a variety of heavier charge particles from radioisotope sources (e.g., alphas from Am241) or accelerators (IBIC) [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Ion Microbeam Studies of Charge Transport in Semiconductor Radiation Detectors With Three-Dimensional Structures: An Example of LGAD

et al. 2022

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The development of semiconductor detectors with an increased tolerance to high radiation levels often results in devices that deviate significantly from those of the classical design with planar electrodes. Decreasing the charge drift distance and/or introducing localised charge multiplication volumes are two detector development strategies that are often used in an attempt to increase the device radiation hardness. However, such approaches result in a more complex three-dimensional distribution of electrodes and sensitive detector volumes, which presents a challenge for the microscopic characterisation of charge transport properties. IBIC (ion beam-induced charge) is one of the available microscopic characterisation techniques that utilises focused, MeV energy range ions to probe charge transport. Here we used IBIC to probe different detector depths by varying the ion energy and/or angle of incidence and to probe certain detector regions by ions of the same range but with different stopping powers. These investigations are particularly important for studying low gain avalanche diode (LGAD) detectors, where measured interpad distances change with proton energy and where an increased carrier density results in changes in the charge multiplication, which are studied in this work.

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Section: Introductionmentioning

confidence: 99%

Ion Microbeam Studies of Charge Transport in Semiconductor Radiation Detectors With Three-Dimensional Structures: An Example of LGAD

et al. 2022

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“…We have presented pulse durations as short as 13.0 fs (3.7 cycles), with a central wavelength of 1060 nm, but this is a non-fundamental limit that we expect to overcome with enhanced bre manufacture precision to obtain atter and nearer to zero dispersion curves of the ANDi PCFs. Based on the all-bre con guration reported here, our future work aims at increasing the output average power to the few-watts level (by increasing the pulse repetition rate of the bre oscillator seed to the GHz range 48 ) and at obtaining few-cycle emission at central wavelengths of 1.5 mm and 2.0 mm, particularly useful for localized nonlinear excitation of semiconductor materials transparent to these wavelengths 49 .…”

Section: Discussionmentioning

confidence: 99%

Few-cycle all-fibre supercontinuum laser for ultrabroadband multimodal nonlinear microscopy

Alamagro-Ruiz¹,

Torres-Peiró²,

Muñoz-Marco³

et al. 2021

Preprint

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Temporally coherent supercontinuum sources constitute an attractive alternative to bulk crystal-based sources of few-cycle light pulses. We present a monolithic fibre-optic configuration for generating transform-limited temporally coherent supercontinuum pulses with central wavelength at 1.06 mm and duration as short as 13.0 fs (3.7 optical cycles). The supercontinuum is generated by the action of self-phase modulation and optical wave breaking when pumping an all-normal dispersion photonic crystal fibre with pulses of hundreds of fs duration produced by all-fibre chirped pulsed amplification. Avoidance of free-space propagation between stages confers unequalled robustness, efficiency and cost-effectiveness to this novel configuration. Collectively, the features of all-fibre few-cycle pulsed sources make them powerful tools for applications benefitting from the ultrabroadband spectra and ultrashort pulse durations. Here we exploit these features and the deep penetration of light in biological tissues at the spectral region of 1 mm, to demonstrate their successful performance in ultrabroadband multispectral and multimodal nonlinear microscopy.

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“…The multiphoton process requires a high density of photons to achieve a significant probability of multiple photons interacting simultaneously. As described in [5], the optical absorption in silicon is given by:…”

Section: Two-photon Absorption Laser Systemmentioning

confidence: 99%

“…These points deviate from the expected curve, however an explanation for this behaviour is not yet found. The voxel becomes effectively longer in silicon due to the change in refractive index at the air-silicon interface, as described in [5]. Therefore, the effective position 𝑧 within the silicon is given by…”

Section: Two-photon Absorption Laser Systemmentioning

confidence: 99%

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Charge and temporal characterisation of silicon sensors using a two-photon absorption laser

Geertsema,

Akiba,

van Beuzekom

et al. 2021

Preprint

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First measurements are presented from a newly commissioned two-photon absorption (TPA) setup at Nikhef. The characterisation of the various components of the system is discussed. Two planar silicon sensors, one being electron collecting and one hole collecting, are characterised with detailed measurements of the charge collection and time resolution. The TPA spot is determined to have a radius of 0.975(11) µm and length of 23.8 µm in silicon. The trigger time resolution of the system is shown to be maximally 30.4 ps. For both sensors, uniform charge collection is observed over the pixels, and the pixel side metallisation is imaged directly using the TPA technique. The best time resolution for a single pixel is found to be 600 ps and 560 ps for the electron and hole collecting sensors respectively, and is dominated by ASIC contributions. Further scans at different depths in the sensor and positions within the pixels have been performed and show a uniform response. It is concluded that the TPA setup is a powerful tool to investigate the charge collection and temporal properties of silicon sensors.

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Development of a Tabletop Setup for the Transient Current Technique Using Two-Photon Absorption in Silicon Particle Detectors

Cited by 16 publications

References 13 publications

Ion Microbeam Studies of Charge Transport in Semiconductor Radiation Detectors With Three-Dimensional Structures: An Example of LGAD

Ion Microbeam Studies of Charge Transport in Semiconductor Radiation Detectors With Three-Dimensional Structures: An Example of LGAD

Few-cycle all-fibre supercontinuum laser for ultrabroadband multimodal nonlinear microscopy

Charge and temporal characterisation of silicon sensors using a two-photon absorption laser

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