Development of a silicon bulk radiation damage model for Sentaurus TCAD

Folkestad, Åsmund; Akiba, K. Carvalho; Beuzekom, M. van; Buchanan, E.; Collins, P.; Dall’Occo, E.; Canto, A. Di; Lima, V. Franco; Pardiñas, J. García; Schindler, H.; Vicente, M. C.; Diaz, M. Vieites; Williams, Mark Richard James

doi:10.1016/j.nima.2017.08.042

Cited by 19 publications

(17 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To simulate the pixels' electrical characteristics after irradiation with hadrons, we have employed three trap models, similar to [23,24]. The main properties, like the activation energy, and the capture/emission cross-sections for electrons and holes of the defect levels are summarized in Table 1.…”

Section: Bulk Damagementioning

confidence: 99%

Sensor Design Optimization of Innovative Low-Power, Large Area FD-MAPS for HEP and Applied Science

et al. 2021

View full text Add to dashboard Cite

Fully depleted monolithic active pixel sensors (FD-MAPSs) represent a state-of-the-art detector technology and profit from a low material budget and cost for high-energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast and uniform response overall to the pixel matrix. The functionality of these devices has been shown in previous proof-of-concept productions. In this article, we describe the optimization of the test pixel designs that will be implemented in the first engineering run of the demonstrator chip of the ARCADIA project. These optimization procedures include radiation damage models that have been employed in Technology Computer Aided Design simulations to predict the sensors’ behavior in different working environments.

show abstract

Section: Bulk Damagementioning

confidence: 99%

Sensor Design Optimization of Innovative Low-Power, Large Area FD-MAPS for HEP and Applied Science

et al. 2021

View full text Add to dashboard Cite

show abstract

“…To simulate the pixels electrical characteristics after irradiation with hadrons, we have employed a three trap model, similarly to [17,18]. The major properties like the activation energy, and the capture/emission cross-sections for electrons and holes of the defect levels are summarized in Table 1.…”

Section: Bulk Damagementioning

confidence: 99%

Sensor design optimization of innovative low-power, large area MAPS for HEP and applied science

Neubüser,

Corradino,

Betta

et al. 2020

Preprint

View full text Add to dashboard Cite

Fully depleted Monolithic Active Pixels (MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics (HEP) experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast and uniform response overall the pixel matrix. The functionality of these devices has been shown in previous proof-of-concept productions. In this article we describe the optimization of the test pixel designs, that will be implemented in the first engineering run of the demonstrator chip of the ARCADIA project. These optimization procedures include radiation damage models, that have been employed in Technology Computer Aided Design (TCAD) simulations to predict the sensors behavior in different working environments.

show abstract

“…Due to these models are put forward in recent years, some are still in the experimental stage, so this work will not consider directly using these models. In addition, the radiation damage model proposed for P-type silicon would not fit this study [36]. In the simulation process, we take the radiation damage effect in reference [37] into consideration while using the classical physical models, such as Shockley-Read-Hall Generation-Recombination.…”

Section: Introductionmentioning

confidence: 99%

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Liu

Cheng

et al. 2021

Micromachines

View full text Add to dashboard Cite

The radiation fluence of high luminosity LHC (HL-LHC) is predicted up to 1 × 1016 1 MeV neq/cm2 in the ATLAS and CMS experiments for the pixel detectors at the innermost layers. The increased radiation leads to the degradation of the detector properties, such as increased leakage current and full depletion voltage, and reduced signals and charge collection efficiency, which means it is necessary to develop the radiation hard semiconductor devices for very high luminosity colliders. In our previous study about ultra-fast 3D-trench electrode silicon detectors, through induced transient current simulation with different minimum ionizing particle (MIP) hitting positions, the ultra-fast response times ranging from 30 ps to 140 ps were verified. In this work, the full depletion voltage, breakdown voltage, leakage current, capacitance, weighting field and MIP induced transient current (signal) of the detector after radiation at different fluences will be simulated and calculated with professional software, namely the finite-element Technology Computer-Aided Design (TCAD) software frameworks. From analysis of the simulation results, one can predict the performance of the detector in heavy radiation environment. The fabrication of pixel detectors will be carried out in CMOS process platform of IMECAS based on ultra-pure high resistivity (up to 104 ohm·cm) silicon material.

show abstract

Development of a silicon bulk radiation damage model for Sentaurus TCAD

Cited by 19 publications

References 18 publications

Sensor Design Optimization of Innovative Low-Power, Large Area FD-MAPS for HEP and Applied Science

Sensor Design Optimization of Innovative Low-Power, Large Area FD-MAPS for HEP and Applied Science

Sensor design optimization of innovative low-power, large area MAPS for HEP and applied science

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Contact Info

Product

Resources

About