Development of a novel GaAs micromachined accelerometer based on resonant tunneling diodes

Li, Bo; Zhang, Wendong; Xie, Bin; Chen, Xue; Xiong, Jijun

doi:10.1016/j.sna.2007.10.065

Cited by 10 publications

(4 citation statements)

References 14 publications

(10 reference statements)

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Section: Introductionmentioning

confidence: 99%

“…For the past few decades, resonant tunneling diodes (RTDs) have become an engrossing topic of research due to their wide range of applications in both analog and digital circuits [1][2][3][4][5]. Mostly, different types of heterostructures were used to make these RTDs [5][6][7]. Unfortunately, lattice dislocations and lattice mismatches cause severe performance * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Antidote-induced armchair graphene nanoribbon based resonant tunneling diodes

Hossain¹,

Rahaman²,

Alam³

2021

Semicond. Sci. Technol.

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Resonant tunneling phenomena are explored using armchair graphene nanoribbon (AGNR), which eliminates the lattice mismatch and electron mobility degradation problems of conventional heterostructure resonant tunneling diodes (RTDs). Eight antidote topologies are proposed in this paper. These antidote topologies significantly increase or decrease the band gap of AGNR. Both double barrier quantum well and single barrier quantum well structures have been achieved by putting the antidote-induced AGNRs and pristine AGNRs. A numerical approach with a tight binding model and non-equilibrium Green's function formalism has been used to simulate the quantum phenomena of the device. Current-voltage characteristics of these proposed RTDs show a high peak to valley ratio and low power dissipation with respect to different antidote topologies. Channel length variation effects are investigated in the proposed RTDs, and it is found that the peak to valley ratio, valley current, valley voltage, and power dissipation can be improved by tuning the channel length. These graphene-based RTDs are easy to fabricate and offer more flexibility in terms of peak to valley ratio, valley current, valley voltage, and power dissipation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Antidote-induced armchair graphene nanoribbon based resonant tunneling diodes

Hossain¹,

Rahaman²,

Alam³

2021

Semicond. Sci. Technol.

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show abstract

“…Our previous study has already proved that the strain gauge sensitivity of the GaAs-based RTD can be one to two orders of magnitude higher than the traditional Si-based piezoresistive sensing elements [2-4]. Combining with the microelectromechanical system (MEMS) fabrication process on GaAs substrate, RTD has been fabricated as the embedded mechanical sensing element for different MEMS sensors: accelerometers [5] and hydrophone [6]. …”

Section: Introductionmentioning

confidence: 99%

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Guo

Liu

et al. 2013

Nanoscale Res Lett

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As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10−9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

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“…They can be used as the sensitive elements of MEMS sensors, which can greatly improve their sensitivity of the MEMS sensors [ 2 ]. From the experimental results, it already has been demonstrated that the sensitivity of MEMS that use HEMT is two to three orders of magnitude higher than those using the Si piezorsistive elements [ 3 ], and those using RTD are one to two orders of magnitude higher [ 4 , 5 ].…”

Section: Introductionmentioning

confidence: 99%

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Shi

Guo²,

et al. 2012

Materials

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Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.

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Development of a novel GaAs micromachined accelerometer based on resonant tunneling diodes

Cited by 10 publications

References 14 publications

Antidote-induced armchair graphene nanoribbon based resonant tunneling diodes

Antidote-induced armchair graphene nanoribbon based resonant tunneling diodes

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

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