GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Ni, Haiqiao; Shi, Yunbo; Chen, Xue; Niu, Zhichuan; Zhang, Wendong; Li, Mifeng; Yu, Ying

doi:10.1186/1556-276x-8-218

Cited by 12 publications

(6 citation statements)

References 18 publications

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“…Resonant tunneling diodes are versatile optoelectronic devices with a multitude of possible applications ranging from fundamental research of noise correlations, high‐speed oscillators with operation frequencies in the terahertz regime, and novel neuromorphic computation schemes to highly sensitive measurement devices of physical quantities such as strain, temperature, or light …”

Section: Introductionmentioning

confidence: 99%

p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region

Pfenning

Hartmann

Weih

et al. 2018

Advanced Optical Materials

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In a recent publication, we proposed to apply the resonant tunneling diode (RTD) photodetector principle to the mid-infrared (MIR) spectral region, by combining an antimony-based AlSb/ GaSb double barrier quantum well (DBQW) resonant tunneling structure (RTS) with an narrow bandgap absorption region. [17] Hereby, the RTD serves as an internal high-gain amplifier of small optically generated electrical signals. In contrast to, e.g., avalanche photodiodes where the gain is provided via impact ionization processes, the gain of RTD photodetectors originates from the modulation of a larger majority charge carrier tunneling current that is sensitive to small variations of the local electrostatic potential.The so called 6.1 Å family, [18] which is comprised of the three semiconductors InAs, GaSb, and AlSb offers a huge flexibility in designing electronic, optical, and optoelectronic devices, [19] such as topological insulators, [20][21][22][23] optical MIR type-II superlattice photodetectors, [24] and quantum cascade lasers (QCLs), [25][26][27] or interband cascade lasers (ICLs), [27][28][29][30][31] and interband cascade detectors (ICDs). [32,33] This flexibility can mainly be attributed to the huge variety of band lineups, bandgap energies, and in particular to the so called InAs/GaSb type-II broken bandgap alignment. While the InAs/GaSb/AlSb material system has also brought forth a large variety of different resonant tunneling structures, [3,18,34,35] only AlAsSb/GaSb RTDs provide the required energy barriers in both valence and conduction band due to the type-I heterointerface. [36][37][38][39] In another recent publication, we demonstrated that room temperature resonant tunneling of electrons in AlAsSb/GaSb RTDs requires the use of emitter prewells. [40][41][42] Here, we propose to invert the charge carrier polarity within the RTD photodetector, i.e., using p-type instead of n-type doping.Using p-type doping in an RTD photodetector, and therefore hole instead of electron transport, might seem counterintuitive at first, since hole transport usually comes with several disadvantages. Due to their higher effective mass, holes have a lower mobility and a smaller de Broglie wavelength compared to electrons. [43] A lower mobility results in inferior transport properties, a smaller de Broglie wavelength demands a higher quality semiconductor crystal growth. However, and in particular for the GaSb material system, p-type doping may Mid-infrared (MIR) resonant tunneling diode (RTD) photodetectors based on a p-type doped AlAsSb/GaSb double-barrier quantum well (DBQW) are proposed and investigated for their optoelectronic transport properties. At room temperature, a distinct resonant tunneling current with a region of negative differential conductance is measured. The peak-to-valley current ratio (PVCR) is 1.51. To provide photosensitivity within the MIR spectral region, a lattice-matched quaternary low-bandgap GaInAsSb absorption layer with cutoff wavelength of λ = 2.77 μm is integrated near the DBQW. Under illumination with ...

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Section: Introductionmentioning

confidence: 99%

p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region

Pfenning

Hartmann

Weih

et al. 2018

Advanced Optical Materials

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“…During the past few years, resonant tunneling diodes (RTDs) [1][2][3] have been increasingly deployed and investigated as sensors for various physical quantities, such as temperature [4], pressure [5], or light [6]. Of particular interest are RTDs with embedded quantum dots operated as single photon detectors and photon counters [7][8][9][10], or high-gain RTD photodetectors for room temperature telecommunication wavelength light sensing [11].…”

Section: Introductionmentioning

confidence: 99%

Sensitivity of resonant tunneling diode photodetectors

Pfenning¹,

Hartmann²,

Langer³

et al. 2016

Nanotechnology

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We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of 1.3 µm for illumination powers from pico to micro Watts. The sensitivity decreases nonlinearly with power.An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from 5.82 10 A/W to 3.2 A/W. We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole-population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photosensor sensitivity can be assumed constant.

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“…Firstly, monolithic integration chip with the GaAsbased optoelectronic and Si-based microelectronic devices has been realized. [1,2] Secondly, due to the brittleness and higher cost of GaAs wafers, GaAs/Si epilayers could replace GaAs substrates for applications in high-speed microelectronic [3][4][5] and optoelectronic devices. [6][7][8][9][10] Finally, optoelectronic integrated circuits on silicon chips attract ever-increasing attention in the need of high-bandwidth optical interconnects.…”

Section: Introductionmentioning

confidence: 99%

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

Wang

Deng

et al. 2015

Chinese Phys. B

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The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots (QDs) as dislocation filters by metalorganic chemical vapor deposition (MOCVD) is investigated in detail. The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized. It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film. Compared with the dislocation density of 5×10 7 cm −2 in the GaAs/Si sample without QDs, a density of 2×10 6 cm −2 is achieved in the sample with QD dislocation filters.

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GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Cited by 12 publications

References 18 publications

p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region

p‐Type Doped AlAsSb/GaSb Resonant Tunneling Diode Photodetector for the Mid‐Infrared Spectral Region

Sensitivity of resonant tunneling diode photodetectors

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

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