2016
DOI: 10.1016/b978-0-444-63683-6.00004-6
|View full text |Cite
|
Sign up to set email alerts
|

Development of a Multiscale Strategy and Application to Chemical Vapor Deposition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
3
1
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(2 citation statements)
references
References 44 publications
0
2
0
Order By: Relevance
“…The optimization problem has been coded in GAMS® 34.2.0 to perform the multi-objective optimization. This tool is the most used to solve multi-objective optimization problems (Achenie et al 2016;Arora, 2017). The Pareto front was constructed through the ε-constraints method.…”
Section: Description Of Response Surface Methodology and Optimization...mentioning
confidence: 99%
“…The optimization problem has been coded in GAMS® 34.2.0 to perform the multi-objective optimization. This tool is the most used to solve multi-objective optimization problems (Achenie et al 2016;Arora, 2017). The Pareto front was constructed through the ε-constraints method.…”
Section: Description Of Response Surface Methodology and Optimization...mentioning
confidence: 99%
“…An example of a reaction following the above mechanism is the conversion of monosilane for the production of high-grade polysilicon . The deposition rate is affected by thermodynamic, kinetic, and mass diffusion factors, any of which may be dominant depending on the operating conditions of the reactor . Those factors are described in the dynamic model for the lab batch reactor, which is obtained by performing material balances: where component j is described by its inlet feed concentration, C j in [mol·m –3 ], its amount of substance in the gas phase, n j g [mol], and its amount of substance in the solid phase on top of the substrate, n j s [mol]; t [s] is the reaction time; Ḟ in [m 3 · s –1 ] and Ḟ out [m 3 ·s –1 ] are, respectively, the inlet and outlet volumetric flow rates of the carrier gas; h m, j [m·s –1 ] is the gas to solid phase mass transfer coefficient of component j ; V [m 3 ] is the gas phase reaction volume; V int [m 3 ] is the solid–gas interface volume; and A [m 2 ] is the glass surface area in contact with the gas.…”
Section: Aacvd Process Modelmentioning
confidence: 99%