Investigation of transport processes in a commercial hot wall CVD reactor with multi-substrates for high-quality pyrocarbon deposition

Shinde, V. M.; Deivendran, Balamurugan; Kumar, Harish; Prasad, N. Eswara

doi:10.1016/j.surfcoat.2021.127685

Cited by 12 publications

(5 citation statements)

References 48 publications

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“…Using NumPy, the two broad physical phenomena being modeled in this section are gas transport and pore filling. 55 This study uses the single-pore model due to its minimal complexity, which is attractive in such contexts as uncertainty quantification, where the model must have a set of process parameters that is sufficiently small as it is sampled a large number of times with changes in its inputs. 56 The single-pore model has been repeatedly validated 31,[57][58][59][60] and is summarized in this section.…”

Section: Processing To Porositymentioning

confidence: 99%

The effect of chemical vapor infiltration process parameters on flexural strength of porous α$\alpha$‐SiC: a numerical model

Marziale,

Sun,

Walker

et al. 2024

J Am Ceram Soc.

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The flexural strength variability of α‐ based ceramics at elevated temperatures creates the need for an Integrated Computational Materials Engineering (ICME) framework that relates the strength of a specimen directly to its manufacturing process. To create this ICME framework, a model must first be developed which establishes a relationship between the chemical vapor infiltration (CVI) process and parameters, the resulting mesoscale pores, and the overall macroscale flexural strength. Here, a nonlinear single‐pore model of CVI is developed used in conjunction with a four‐way coupled thermo‐mechanical damage model. The individual components of the model are tested and a sample system under a four‐point bending test is explored. Results indicate that specimens with an initial porosity greater than 30% require temperatures below 1273 K to maintain structural integrity, while those with initial porosities less than 30% are temperature‐independent, allowing for optimization of the CVI processing time without compromising strength.

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Section: Processing To Porositymentioning

confidence: 99%

The effect of chemical vapor infiltration process parameters on flexural strength of porous α$\alpha$‐SiC: a numerical model

Marziale,

Sun,

Walker

et al. 2024

J Am Ceram Soc.

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“…Mass transport modeling plays a crucial role in CVD processes by providing insights into the complex interactions between fluid dynamics, thermodynamics, and chemical reactions, which are essential for optimizing deposition quality and efficiency. These models help elucidate the basic mechanisms of multi-species transport and their interplay with gas and surface reactions, as seen in the development of 3D CFD models for pyrocarbon deposition [80]. The integration of mass transport with chemical kinetics models, such as those for carbon-coated optical fibers, allows for the optimization of coating quality by validating different reactor models under various conditions [81].…”

Section: Mass Transport Modelingmentioning

confidence: 99%

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Łach,

Svyetlichnyy

2024

Preprint

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Chemical vapor deposition (CVD) is a vital process for depositing thin films of various materials with precise control over thickness, composition, and properties. Understanding the heat and mass transfer mechanisms during CVD is essential for optimizing process parameters and ensuring high-quality film deposition. This review provides an overview of recent advancements in the heat and mass transfer modeling for chemical vapor deposition processes. It explores innovative modeling techniques, recent research findings, emerging applications, and challenges in the field. Additionally, it discusses future directions and potential areas for further advancement in CVD modeling.

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“…Like in Sections 5.1 and 5.2, the authors examined various flow patterns at different inlet velocities and rotational speeds to identify the most favorable conditions for achieving smooth flow patterns over the wafer. Contrary to nitrogen and hydrogen, for which the data were sourced from the internal COMSOL library for the properties, the properties of ammonia were taken from the National Institute of Standards and Technology (NIST) webpage and from [42] to allow for an assessment of this system at higher pressures. Ammonia was only investigated up to a pressure of 10 atm, as it is anticipated that it would condense in the system and supply lines feeding the system above these values due to its liquid/gas transition pressure of 10.5 atm at 300 K.…”

Section: Ammoniamentioning

confidence: 99%

Numerical Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability at High Pressures

Enayati,

Pimputkar

2024

Crystals

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Highly indium-rich group-III nitrides are attracting attention for advancing our capacity to create highly effective optical emitters at extended visible/IR wavelengths or for enhancing bandgap engineering possibilities within the group-III nitride material framework. Current methods of synthesis are constrained in their efficacy, partially owing to the low decomposition temperature of indium nitride. Implementation of a new design of a vertical high-pressure spatial chemical vapor deposition (HPS-CVD) reactor with six separated precursor source zones and a rotating wafer carrier disk carrying four 2-inch wafers is proposed and analyzed using COMSOL Multiphysics as a commercial computational fluid dynamics (CFD) program to study the fluid phenomena inside the numerical domain. This study focuses on understanding the different flow patterns within the chambers at super-atmospheric conditions (5 atm to 30 atm) and identifying suitable operating conditions under which smooth and dominant vortex-free flow is achieved. Four 2-inch wafers are heated to maintain a temperature of 1200–1300 K at each pressure and gas type. Three different gas types (nitrogen, hydrogen, and ammonia) are used, and the impacts of different inlet flow velocities and rotational speeds are investigated and discussed. An operating matrix is presented for each analyzed system pressure providing suitable combinations of these operational variables for smooth flow in the chambers. Each gas type was identified to have a range of suitable rotational and inlet velocity regimes at each operating pressure. Overlap of these three gas-specific operating condition windows resulted in the identification of a generally suitable operating condition for smooth flow patterns in the system regardless of the gas type used, as required for the growth of group-III nitride materials.

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Investigation of transport processes in a commercial hot wall CVD reactor with multi-substrates for high-quality pyrocarbon deposition

Cited by 12 publications

References 48 publications

The effect of chemical vapor infiltration process parameters on flexural strength of porous α$\alpha$‐SiC: a numerical model

The effect of chemical vapor infiltration process parameters on flexural strength of porous α$\alpha$‐SiC: a numerical model

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Numerical Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability at High Pressures

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