Development of a model for on-line control of crystal growth by the AHP method

Гоник, М. А.; Ломохова, А. В.; Gonik, M. M.; Kuliev, A.T.; Smirnov, Andrey

doi:10.1016/j.jcrysgro.2006.12.053

Cited by 4 publications

(2 citation statements)

References 10 publications

(14 reference statements)

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“…Это позволяет не только резко сократить объем вычислений при глобальном моделировании, но и предложить 2D−модель, обеспечивающую вы-полнение численных расчетов в режиме реального времени [14].…”

Section: моделирование тепломассопереноса и устойчивости формообразовunclassified

Possibility of Growing Bulk Si—ge Crystals Using Axial Heat Flow Method Near the Crystallization Front

Гоник¹,

Cröll

2015

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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Section: моделирование тепломассопереноса и устойчивости формообразовunclassified

Possibility of Growing Bulk Si—ge Crystals Using Axial Heat Flow Method Near the Crystallization Front

Гоник¹,

Cröll

2015

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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“…The results of modeling AIX 200/4 HT reactor during gallium nitride growth with a separate inlets of group‐III and group‐V precursors were described in , where separation plate configuration influence was studied and good agreement with experimentally determined growth rate distribution was obtained. Heat transfer in AHP growth system has been modeled in for improvement of the control system.…”

Section: Introductionmentioning

confidence: 99%

Numerical design of Metal‐Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth

Skibiński

Caban

Wejrzanowski

et al. 2016

Crystal Research and Technology

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The paper presents the results of numerical simulations and experimental measurements of the epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy within a AIX-200/4RF-S reactor. The aim was to develop optimal process conditions for obtaining the most homogeneous crystal layer. Since there are many factors influencing the chemical reactions on the crystal growth area such as: temperature, pressure, gas composition or reactor geometry, it is difficult to design an optimal process. In this study various process pressures and hydrogen volumetric flow rates have been considered. Due to the fact that it is not economically viable to test every combination of possible process conditions experimentally, detailed 3D modeling has been used to get an overview of the influence of process parameters. Numerical simulations increased the understanding of the epitaxial process by calculating the heat and mass transfer distribution during the growth of gallium nitride. Appropriate chemical reactions were included in the numerical model which allowed for the calculation of the growth rate of the substrate. The results obtained have been applied to optimize homogeneity of GaN film thickness and its growth rate.

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On the determination of diffusion coefficients in two-component alloys and doped semiconductors. Several implications concerning the International Space Station

Sánchez

Ruíz

Pujalte

et al. 2015

International Journal of Heat and Mass Transfer

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The accurate determination of interdiffusion coefficients is a technologically relevant problem that has implications on the correctness of the predictions when using the existing models of solidification. It is also important in the validation of different theories of atomic diffusion. The experimental determination of these coefficients when there is a liquid phase is difficult due to the unavoidable presence of buoyancy driven convection currents that enhance mass transport and disturb diffusion measurements. To minimize as much as possible these problems, long capillaries are used in order to confine the fluid and reduce the intensity of the convective motions. More recently, these measurements have been done in reduced gravity environments, but the residual gravity is still able to induce buoyancy driven convection motions. The aim of our work is to numerically analyze the impact of low and moderate Rayleigh number environments on the accuracy of the interdiffusion coefficient measurements using long capillaries. In the present study we deal with two liquid systems; photovoltaic silicon and Al-based liquid binary alloys at high temperature. We have numerically simulated in 3D two different experimental techniques used to determine the diffusion coefficients, this extends previous reported 2D calculations. We also consider the effect of rotating the cylindrical cell along their axis as a general stabilization mechanism of the convective motions. Finally, we use typical accelerometric signals from the International Space Station (ISS) in the quasi-steady range of frequencies. The signals concentrate on typical station reboosts because of the accelerometric level of the rest of disturbances -dockings, undockings and Extra Vehicular Activities, EVAs-is considerably lower. Keywords: Diffusion coefficients, Numerical simulation, Microgravity conditions, Melted semiconductors, Liquid metals, Shear Cell, Long Capillaries

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Development of a model for on-line control of crystal growth by the AHP method

Cited by 4 publications

References 10 publications

Possibility of Growing Bulk Si—ge Crystals Using Axial Heat Flow Method Near the Crystallization Front

Possibility of Growing Bulk Si—ge Crystals Using Axial Heat Flow Method Near the Crystallization Front

Numerical design of Metal‐Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth

On the determination of diffusion coefficients in two-component alloys and doped semiconductors. Several implications concerning the International Space Station

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