2013 IEEE 63rd Electronic Components and Technology Conference 2013
DOI: 10.1109/ectc.2013.6575688
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Development of a Low CTE chip scale package

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Cited by 10 publications
(2 citation statements)
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“…Much work has been done to mitigate CPI stress and resulting WBs by improving adhesion and fracture toughness of dielectric films [8], improving the via passivation design [5], developing a low CTE organic substrate [9], improving the chip joining process (slow cooling rate post-reflow) [6], developing differential heating/cooling chip joining method [7]. CPI Stresses in the BEOL can be further reduced by using an epoxy compound as an underfill (encapsulation) material for C4s in a flip chip package which helps redistribute and thus mitigate the stress in the C4s.…”
Section: Introductionmentioning
confidence: 99%
“…Much work has been done to mitigate CPI stress and resulting WBs by improving adhesion and fracture toughness of dielectric films [8], improving the via passivation design [5], developing a low CTE organic substrate [9], improving the chip joining process (slow cooling rate post-reflow) [6], developing differential heating/cooling chip joining method [7]. CPI Stresses in the BEOL can be further reduced by using an epoxy compound as an underfill (encapsulation) material for C4s in a flip chip package which helps redistribute and thus mitigate the stress in the C4s.…”
Section: Introductionmentioning
confidence: 99%
“…These stresses will eventually decrease the reliability of the organic package. Efforts to address the challenges include development of low CTE chip scale package [Yamada et al 2013], design and selection of dielectric materials with compatible properties through thermal-mechanical modeling [Nakanish 2007, Banerji 2002, Iannuzzelli 1991] and fabrication of robust stacked-via structures [Sundaram 2004]. …”
Section: Introductionmentioning
confidence: 99%