The increasing demand for high density interconnects leads to the adoption of stacked via technology. By layering multiple vias directly on top of each other, via stacking allows for more compact and flexible routing. However, due to the geometric discontinuity and non-uniform stiffness, stacked vias also present significant reliability challenges.In the investigation of via stack cracking mechanism in packaging applications, 16 types of stacked and staggered via chain structures were designed and fabricated in an organic chip carrier test vehicle. The experiments were also designed to evaluate other effects such as stacked via location, laminate materials, etc. Comparison of fail counts versus via chain types after 1000 cycles of deep thermal cycling (DTC) revealed that some types of stacked via structures are significantly more robust than others. Strong location dependency of stacked via fail was also observed by comparing the identical stacked via structure in different locations: out of 75 modules, 31 fails were detected in the stacked via chain under the chip center, but none under the chip corner.This paper focuses on the development of a predictive model with finite element method. Modeling activities were carried out to investigate the effect of via structure, package geometry, laminate material and other form factors on via cracking. The thermal-mechanical modeling methodology will be described in this paper. The discussion of failure mechanism and the correlation of simulations with experimental results will be presented.
IntroductionOrganic substrates are widely implemented for silicon packaging due to low cost and electrical performance enhancements. The key technology elements of an organic substrate include build-up layers containing most of the wiring, a core and the surface finish for soldering and adhesion. Volume production and low cost of organic substrates were enabled by breakthroughs in laser drilling technology for micro-via, a metalized connecting channel that provides a layer-to-layer connection [Blackshear 2005].The increasing demand for computation performance calls for higher chip frequencies, higher bandwidth, and lower latencies that lead to continuous technology scaling. Moreover, continuous scaling and system integration (adding new and more functionality, such as RF communication, sensors, etc.) require higher I/O density both at the wafer level and at the package level. The 2012 ITRS roadmap calls for organic substrates with lines and spaces below 10um for 16nm technology and beyond [ITRS 2012].