Development of a high-density silicon carbide material for heating elements using a planning method

Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources

“…3, was then extrapolated to figure out the actual operating temperature, which was found to be 1520Ϯ 70 K. As expected, the temperature variation with electrical power resulted in a linear dependence validating the extrapolation. 8 Although the globar is generally treated as a perfect blackbody radiator, this is not really the case. It is in fact a "grey-body" radiator, and as such will have a temperaturedependent emissivity ͑denoted as ͒ that is less than one.…”

Reactive Infiltration: Effects of Different Parameters

“…SiC is characterized by its high decomposition temperature, remarkable hardness, thermal conductivity surpassing any metal, and a moderate thermal coefficient of expansion [3][4][5]. Consequently, SiC has been used in a variety of applications, serving as a reinforcement in composite materials [4][5][6], in the electronics industry [7][8][9], and more recently in the manufacture of graphene [10,11], used in nuclear applications [12][13][14] and in the manufacture of furnace heating elements [15]. While the production of powder manufacturing, such as in monocrystalline whiskers, has been effectively addressed [16][17][18][19][20][21], the manufacture of pieces remains a challenge.…”