Comparison of photoexcited p-InAs THz radiation source with conventional thermal radiation sources

Abstract

P-type InAs excited by ultrashort optical pulses has been shown to be a strong emitter of terahertz radiation. In a direct comparison between a p-InAs emitter and conventional thermal radiation sources, we demonstrate that under typical excitation conditions p-InAs produces more radiation below 1.2 THz than a globar. By treating the globar as a blackbody emitter we calibrate a silicon bolometer which is used to determine the power of the p-InAs emitter. The emitted terahertz power was found to be 98Ϯ 10 nW in this experiment.

Wavelength conversion through plasmon-coupled surface states

“…The measured terahertz pulse energy/power from the fabricated nanoantenna array as a function of the optical pulse energy/power (Fig. 2D inset) is compared with other passive optical-to-terahertz converters reported in the literature, which utilize nonlinear optical processes , spintronics (44)(45)(46)(47), and the photodember effect (48)(49)(50)(51). The comparison indicates record-high efficiency of the plasmon-coupled surface states in passive wavelength conversion of nanojoule optical pulses to terahertz regime with efficiencies that exceed nonlinear optical methods by 4-orders of magnitude (Fig.…”

Peeling adhesive tape emits electromagnetic radiation at terahertz frequencies

“…We attribute the muchsmaller gradual increase of the detected signal with time on the top of the signal produced by tribocharging to thermal radiation arising from the tape heating upon unwinding. (By thermal radiation we mean radiation at the frequency being detected, in this experiment 0.1-3 THz, originating from a heated body [11]. )…”