Development of a Cost-Effective, Selective-Epi, SiGe:C HBT Module for 77GHz Automotive Radar

Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology

“…These f MAX values are the best reported for a 200GHz f T device. This high f MAX is attributed to the low base resistance [7], combined with the negligible collector-base capacitance impact of the SIBL module. …”

(Invited) Advanced Transistor Architectures for Half-Terahertz SiGe HBTs

“…On the one hand, concepts with non-selective base epitaxy had demonstrated excellent performance (5), (6). On the other hand, the classical double-polysilicon (DP) technology with selective epitaxial growth (SEG) of the base had attracted increasing interest (7), (8). Obviously, this well-tested architecture provides an easier way to a fully self-aligned (FSA) design resulting in potentially lower parasitics and fabrication cost.…”