(Invited) Advanced Transistor Architectures for Half-Terahertz SiGe HBTs

Heinemann, B.; Fox, A.; Rücker, H.

doi:10.1149/05009.0061ecst

Cited by 9 publications

(3 citation statements)

References 13 publications

(22 reference statements)

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“…In this design, the PA consists of three common-emitter stages in the class AB biasing condition. This proposed PA is fabricated in IHP SG13G2 0.13-μm BiCMOS SiGe HBT technology [27] with device peak fT / fmax of around 300/500 GHz. What's more, the breakdown voltages VCEO is 1.6 V. Each bipolar transistor with device size of 8×0.07×0.9 μm 2 is used in this design.…”

Section: Transistor Size and Impedance Matchingsmentioning

confidence: 99%

“…To achieve the high performance, several excellent PAs have been reported in [12]- [22] taking the advantages of nanoscale CMOS technologies. Recently, the SiGe BiCMOS technology has been drawn significant attentions to the high speed performance of heterojunction bipolar transistors (HBTs), which is believed to be an excellent candidate for high output power millimeter-wave (mm-Wave) wireless applications [23]- [26].The breakdown voltage in a standard 0.13-μm SiGe BiCMOS dictates a nominal supply voltage of approximate 1.7 V with high current density and cut-off frequency fT [27]. Therefore, the SiGe BiCMOS technology is ideal for power amplifier design to obtain good performances at mmWave or sub-mmWave band.…”

Section: Introductionmentioning

confidence: 99%

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A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$ </tex-math> </inline-formula> Technology

Hou

Yang

Chiu

et al. 2018

IEEE Trans. Circuits Syst. I

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Load-variation insensitivity for impedance matching between power amplifiers (PAs) and transmitted antennas contributes to challenge the design of millimeter-wave wireless systems. In this paper, a W-band two-way balanced power amplifier (PA) based on a compact quadrature coupler with broadside coupled strip-line (BCSL) as the core section has been presented to enhance the load-variation insensitivity and stability. By utilizing the proposed coupler topology, the proposed coupler obtains broadband performances with low amplitude and phase imbalance. The designed W-band PA achieves higher power-added efficiency (PAE) and saturated output power Psat over wide frequency bandwidth. The proposed W-band balanced PA is implemented in a 0.13-μm SiGe BiCMOS process and achieves a measured Psat of 16.3 dBm and a peak PAE of 14.1% at 100 GHz under 1.6-V power supply. The measured Psat with 1-dB bandwidth is from 91 to 102 GHz. The measured results present the feasibility of the compact quadrature coupler. The total chip area (with pads) is 0.64 mm 2 , where the size of the proposed quadrature coupler is only 0.04 mm 2 . Index Terms-SiGe, W-band, quadrature coupler, broadside coupled strip-line (BCSL), balanced power amplifier.

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Section: Transistor Size and Impedance Matchingsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$ </tex-math> </inline-formula> Technology

Hou

Yang

Chiu

et al. 2018

IEEE Trans. Circuits Syst. I

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“…The 5G is 20 times more rapid the 4G at the current [1]. Among several possible uses, the 60 GHz Wi-Gig [2], the 77 GHz automobile radar [3], and the 28-/39-GHz cellular network [1] are expected to be widely used to facilitate the corporatization of the planned 5G in the very near future. The new mm-wave transceiver design differs greatly from conventional transceiver architecture in that local oscillator (LO) generation is often achieved using either frequency multiplication or subharmonic mixing techniques.…”

Section: Introductionmentioning

confidence: 99%

Design Miniaturized Millimeter-Wave Butterworth Bandpass Filters in 0.13-µm BiCMOS Technology for 5G Wireless Applications

Mousa

Abdullah

El-Soud

et al. 2023

Preprint

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In this paper, a design methodology for a miniaturized millimeter-wave bandpass filter (BPF) on-chip is presented. The introduced method is based on quasi-lumped elements, which consist of a resonator with a meander transmission line and metal-insulator-metal (MIM) capacitors. In this technique, the conventional large-size coil is replaced by a compact transmission line and MIM capacitor, where the filter is equivalent to the large coil and the associated capacitors. Four implementations of simplified LC-equivalent circuit layouts are carried out in order to fully explain the introduced technique. The four introduced designs are first-order Butterworth BPF, second-order Butterworth BPF, third-order Butterworth BPF, and fourth-order Butterworth BPF. All these four designs are simulated in 0.13-µm BiCMOS technology. Each of the first design BPF and the second BPF has one meander line and MIM capacitors (one capacitor in first design and two capacitors in second design). The simulation results for the first design BPF show an insertion loss of 2.3 dB at the frequency center of 54.2 GHz of this filter, and the return loss range from 10 dB to 28.3 dB in the band of frequencies of 48.9 to 58.9 GHz. The chip size of the first design BPF is 0.055 × 0.074 mm2. The simulation results for the second design BPF show an insertion loss of 2.37 dB at the frequency center of 47.5 GHz of this filter, and the return loss range from 10 dB to 23 dB in the band of frequencies of 44 to 53 GHz. The chip size of the second design BPF is 0.092 × 0.074 mm2. The third design BPF and the fourth design BPF include two meander lines and MIM capacitors (three capacitors in third design and four capacitors in fourth design), which has a very low insertion loss of 1.19 dB at the frequency center of 49 GHz. The return loss ranges from 10 dB to 45.3 dB at frequencies 41 GHz to 59 GHz. The chip size of the third design BPF is 0.098 × 0.19 mm2. The simulated results for the fourth-design BPF show an insertion loss of 1.25 dB at the center frequency of 50 GHz, and the return loss ranges from 10 dB to 50 dB at frequencies from 43 GHz to 58 GHz. The chip size of the fourth BPF is 0.098 × 0.25 mm2. The bandwidth range for each of the four designs is 48.2 GHz to 59.3 GHz for the first BPF, 44 GHz to 53 GHz for the second BPF, 35 GHz to 65 GHz for the third BPF, and 38.5 GHz to 64 GHz for the fourth BPF.

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An integrated spiral DGS and an open stub meander-line resonator in the 0.13-µm BiCMOS technology for a 18-GHz band oscillator

Mousa,

Yakout,

Abdullah

et al. 2023

Journal of Electromagnetic Waves and Applications

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(Invited) Advanced Transistor Architectures for Half-Terahertz SiGe HBTs

Cited by 9 publications

References 13 publications

A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$ </tex-math> </inline-formula> Technology

A W-Band Balanced Power Amplifier Using Broadside Coupled Strip-Line Coupler in SiGe BiCMOS 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu\text{m}$ </tex-math> </inline-formula> Technology

Design Miniaturized Millimeter-Wave Butterworth Bandpass Filters in 0.13-µm BiCMOS Technology for 5G Wireless Applications

An integrated spiral DGS and an open stub meander-line resonator in the 0.13-µm BiCMOS technology for a 18-GHz band oscillator

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