Development of 10 kV 4H-SiC JBS diode with FGR termination

Huang, Runhua; Tao, Yonghong; Cao, Ping; Wang, Ling; Bai, Song; Li, Rui; Li, Yun; Zhao, Zhiying

doi:10.1088/1674-4926/35/7/074005

Cited by 8 publications

(5 citation statements)

References 7 publications

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“…In our previous research, a SiC SBD diode with a breakdown voltage higher than 10kV has been reported [1]. In this paper, we will report a 10 kV 4H-SiC diode with JTE termination.…”

Section: Introductionmentioning

confidence: 89%

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Development of g10kv 4H-SiC SBD junction extension termination

Huang¹,

Tao²,

Chen³

et al. 2016

Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)

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10kV 4H-SiC JBS diodes with various junction extension terminations have been experimentally realized. The protection efficiencies of single JTE and modulation JTE terminations were investigated by means of numerical simulations. The JTE dose window to achieve the high protection efficiency has been enlarged, which indicates the robustness to the deviation of effective JTE dose and SiO2/SiC interface charge. The samples with the single JTE, two-zone JTE, three-zone JTE and improved three-zone JTE terminations were fabricated. With the modulation JTE, the typical breakdown voltage of 13.5 kV corresponding to protection efficiency of 95% has been achieved, and the various JTE terminations were compared and discussed.

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“…In our previous research, a SiC SBD diode with a breakdown voltage higher than 10kV has been reported [1]. In this paper, we will report a 10 kV 4H-SiC diode with JTE termination.…”

Section: Introductionmentioning

confidence: 89%

“…In most of the high voltage SiC SBD, the termination of floating guard ring termination (FGR) was widely used because that FGR can be formed together with active region [1]. However the protection efficiency of FGR is not enough for the ultrahigh voltage SiC power devices [2,3].…”

Section: Introductionmentioning

confidence: 99%

Development of g10kv 4H-SiC SBD junction extension termination

Huang¹,

Tao²,

Chen³

et al. 2016

Proceedings of the 2016 International Conference on Advanced Electronic Science and Technology (AEST 2016)

Self Cite

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“…In order to minimize this effect and to obtain a higher breakdown voltage, adequately designed edge termination structures should be applied. Nowadays, several edge termination structures have been adopted in the SiC power devices, such as field plate (FP), junction termination extension (JTE), and multiple floating field limiting rings (MFFLR) [4][5][6]. However, FP structures suffer from an enhanced oxide field near the field plate edge due to SiC's high critical field strength, resulting in serious reliability concerns in the high-voltage applications.…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes

Sang

Yang

et al. 2020

MSF

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Designed for 6500V 4H-SiC JBS diodes, a highly-efficient termination structure of a non-uniform multiple floating field limiting rings (MFFLR) featuring with a non-uniform ring spacing and a multiple region division is studied and purposed. For each region, ring spacing is modulated independently by a multiplication factor and a linear increment factor. The non-uniform MFFLR structure is simulated and optimized for a better electric field distribution and a higher breakdown voltage. Based on the simulation results, 4H-SiC JBS diodes with the optimized non-uniform termination designs are fabricated. Experimental results show that the SiC JBS diode with optimized non-uniform MFFLR termination structure can achieve a breakdown voltage of up to 7800 V, and its termination efficiency is about 94% of an ideal parallel-plane junction’s. Our results demonstrate that the optimized non-uniform MFFLR termination structure is capable for SiC JBS diodes with breakdown voltage of 6500V and above. Our results can provide a valuable design methodology of edge termination structures for other high-voltage SiC devices.

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“…In order to minimize this effect and to obtain a higher breakdown voltage, adequately designed edge termination structures must be applied. Nowadays, several edge termination structures have been adopted in the SiC power devices, such as field plate (FP), junction termination extension (JTE), and field limiting rings [4][5][6]. In the fabrication of high-voltage SiC devices, field plate and field limiting rings composite structure is more attractive since it is usually formed simultaneously with the main junction, and is not sensitive to the dose density.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes

Sang

Xia

Tian

et al. 2020

MSF

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The effect of the field oxidation process on the electrical characteristics of 6500V 4H-SiC JBS diodes is studied. The oxide thickness and field plate length have an effect on the reverse breakdown voltage of the SiC JBS diode. According the simulation results, we choose the optimal thickness of the oxide layer and field plate length of the SiC JBS diode. Two different field oxide deposition processes, which are plasma enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor deposition (LPCVD), are compared in our paper. When the reverse voltage is 6600V, the reverse leakage current of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 0.7 μA, which is 60% lower than that of PECVD process. When the forward current is 25 A, the forward voltage of SiC JBS diodes with the field oxide layer obtained by LPCVD process is 3.75 V, which is 10% higher than that of PECVD process. There should be a trade-off between the forward and reverse characteristics in the actual high power and high temperature applications.

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Development of 10 kV 4H-SiC JBS diode with FGR termination

Cited by 8 publications

References 7 publications

Development of g10kv 4H-SiC SBD junction extension termination

Development of g10kv 4H-SiC SBD junction extension termination

Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes

Effect of the Field Oxidation Process on the Electrical Characteristics of 6500V 4H-SiC JBS Diodes

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