Development of g10kv 4H-SiC SBD junction extension termination

Abstract

10kV 4H-SiC JBS diodes with various junction extension terminations have been experimentally realized. The protection efficiencies of single JTE and modulation JTE terminations were investigated by means of numerical simulations. The JTE dose window to achieve the high protection efficiency has been enlarged, which indicates the robustness to the deviation of effective JTE dose and SiO2/SiC interface charge. The samples with the single JTE, two-zone JTE, three-zone JTE and improved three-zone JTE terminations were fabricated. With the modulation JTE, the typical breakdown voltage of 13.5 kV corresponding to protection efficiency of 95% has been achieved, and the various JTE terminations were compared and discussed.

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

“…The results showed that, for 90% of the theoretical BV, a conventional SZ-JTE obtained a narrow JTE dose tolerance of 1.0 × 10 12 cm −2 . Therefore, many modified forms of JTE have been proposed to improve the sensitivity, such as guard ring-assisted JTE (GA-JTE) [15,16,17], double-zone JTE (DZ-JTE) [18,19], multiple-zone JTE (MZ-JTE) [20,21], etched JTE [22,23], counter-doped JTE (CD-JTE) [24], and mesa combined with JTEs [25,26]. Feng [14] also reported that the JTE dose tolerance (4.8 × 10 12 cm −2 ) in the conventional DZ-JTE was improved compared with the conventional SZ-JTE.…”