Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

Kalinovskii, V. S.; Kontrosh, E. V.; Klimko, G. V.; Ivanov, S. V.; Yuferev, V. S.; Ber, B. Ya.; Kazantsev, D. Yu.; Андреев, В. М.

doi:10.1134/s1063782620030112

Cited by 6 publications

(4 citation statements)

References 14 publications

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“…Further details of the entire simulation procedure used to obtain the I – V curves can be found in [23]. In addition, information concerning the high accuracy of the Silvaco Atlas for predicting actual experimental data can be found in [9] and [49].…”

Section: Methodsmentioning

confidence: 99%

Dependence of the vertical‐tunnel‐junction GaAs solar cell on concentration and temperature

Outes

Fernández

Seoane

et al. 2022

IET Renewable Power Gen

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Modelling the current-voltage (I-V) characteristics of photovoltaic (PV) devices is important for understanding their behaviour and potential. Typically, the single exponential model (SEM) is used because of its simplicity and accuracy. In this work, we validate the SEM for a gallium arsenide (GaAs) vertical-tunnel-junction (VTJ) using TCAD software. This cell is the key to overcoming the series resistance limitations of current concentrator solar cells, which can lead to the development of ultra-high concentrator photovoltaic systems (UHCPV) with concentrations (C ratio ) greater than 1000 suns. The results indicate that the SEM is a suitable tool to model the I-V characteristics of the VTJ cell with mean errors lower than 1%. Moreover, the solar cell did not show any limitations regarding the C ratio and temperatures under investigation. In addition, the analysis of the temperature coefficients of the cell demonstrates that their dependency on temperature reduces as C ratio increases. The results of this work suggest that VTJ is a promising solution to produce a new generation of high-efficiency and low-cost UHCPV systems.

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Section: Methodsmentioning

confidence: 99%

Dependence of the vertical‐tunnel‐junction GaAs solar cell on concentration and temperature

Outes

Fernández

Seoane

et al. 2022

IET Renewable Power Gen

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“…At the same time, the actual achieved efficiency of solar cells, which has significantly increased from 11 to 15 % for those previously created on the basis of silicon and germanium, currently does not exceed 39 -41 %, even for a new generation of photovoltaic semiconductor converters. They are developed on the basis of multilayer, for example, AlInGaPAs/GaAs/Si, InGaP, InGaAs and Ge nanoheterostructures of cascade type grown by gas-phase epitaxy from organometallic compounds on silicon and germanium substrates [98][99][100][101][102][103][104][105][106]. At the same time, an increase in the maximum power of the solar cells is achieved not only by improving the structure of p-n junctions, but also by focusing the sun's rays using mirrors and Fresnel mini-lenses.…”

Section: Stability Of Processes In Non-equilibrium Systemsmentioning

confidence: 99%

Personalized energy systems based on nanostructured materials

Коваленко¹,

Тугова²,

Попков³

et al. 2021

Nanosystems: Phys. Chem. Math.

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In this paper, the achievements, problems and prospects of creating personalized energy systems based on nanostructured materials are analysed. Various concepts of developing methods and ways of personalized energy provision for autonomous human survival in remote natural habitat, emergency situations of natural disasters and technogenic catastrophes when centralized power supply is unavailable or in an effort to reduce the economic and environmental costs of remote energy production and transportation are also considered. The possibilities and limitations of using traditional and renewable alternative energy sources, processes and devices for extracting, storing and converting their energy into the necessary consumer forms due to fundamental physical laws are discussed as well. The article covers the new nanostructured materials with special functional properties for personalized energy systems development. The mechanisms for formation of the required nanostructures in synthesized materials, especially those with a high content of fractal interfacial formations, are considered as well as methods for studying their structural and phase characteristics that determine the achievability of the specified parameters of model converters and energy storage devices.

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“…This software solves the Poisson and transport equations under the correct boundary conditions in all the layers of the device. Silvaco ATLAS is a widely used simulation suite that has proven to deliver trustable results for designing electronic devices, including MJ concentrator solar cells 3,31,32 . Recombination effects such as Auger, Shockley–Read–Hall and Radiative have been considered, together with the resistance of the different semiconductor layers.…”

Section: Device Structure and Simulationmentioning

confidence: 99%

“…Silvaco ATLAS is a widely used simulation suite that has proven to deliver trustable results for designing electronic devices, including MJ concentrator solar cells. 3,31,32 Recombination effects…”

Section: Device Structure and Simulationmentioning

confidence: 99%

Ultra‐efficient intrinsic‐vertical‐tunnel‐junction structures for next‐generation concentrator solar cells

Seoane

Férnández

Almonacid

et al. 2020

Progress in Photovoltaics

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The efficiency of solar cells can be enhanced by increasing the light intensity and/or the number of bandgaps of the structure. However, current solar cells cannot fully exploit these two factors because of various critical drawbacks. Here, we show a novel microscale, that is, side ≈ 0.5 mm, vertical solar cell structure that does not suffer the series resistance and bandgap limitations issues of current devices. The preliminary structures investigated show extreme efficiencies, >40%, at ultrahigh concentration factors of 15 000 suns. In addition, future designs with a better bandgap configuration are expected to deliver cells with efficiencies far above 50% at extreme light intensities. This early design offers a fast and reliable route to push the efficiency towards the maximum solar conversion limit and represents a promising way to develop new‐generation ultraefficient and low‐cost concentrator photovoltaic systems.

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Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

Cited by 6 publications

References 14 publications

Dependence of the vertical‐tunnel‐junction GaAs solar cell on concentration and temperature

Dependence of the vertical‐tunnel‐junction GaAs solar cell on concentration and temperature

Personalized energy systems based on nanostructured materials

Ultra‐efficient intrinsic‐vertical‐tunnel‐junction structures for next‐generation concentrator solar cells

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