Dependence of the vertical‐tunnel‐junction GaAs solar cell on concentration and temperature

Outes, Celia; Fernández, Eduardo F.; Seoane, Natalia; Almonacid, Florencia; García‐Loureiro, Antonio J.

doi:10.1049/rpg2.12456

Cited by 3 publications

(1 citation statement)

References 58 publications

(100 reference statements)

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“…In recent years, research efforts have been carried out to create laser and solar power converters with side-input of light 1 , 2 . A distinctive feature of AlGaAs/GaAs based photovoltaic converters (PVC) is the presence of a thick Al x Ga 1−x As layer (more than 50 μm) with a gradient composition 3 – 6 .…”

Section: Introductionmentioning

confidence: 99%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

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Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga–Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1−xAs layers, it is expedient to use Ga–Bi melts with 20 at% or less bismuth content. SIMS and Hall characterization of AlxGa1−xAs layers revealed that the growth of AlxGa1−xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

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Section: Introductionmentioning

confidence: 99%

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Khvostikova,

Vlasov,

Ber

et al. 2024

Sci Rep

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A detailed analysis on the heat generated inside c-Si solar cell

Lu,

Li,

Lun

et al. 2024

AIP Advances

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The heat generated inside solar cells is one of the important factors influencing the operational stability of a photovoltaic system composed of solar cells. In this work, based on the influencing factors of four main heat-generated mechanisms inside c-Si solar cells, i.e., the energy relaxation process of the hot carrier, Joule heat, recombination heat, and Peltier and Thomson effects, the distribution features of the heat generated by each mechanism are first discussed, and then, considering two common working conditions of c-Si solar cells in module form, i.e., the variations of environmental temperature and output voltage, the changing rules of the distributions of heat generated by different mechanisms are analyzed. The general features of the heat distributions of c-Si solar cells are that the obviously absorbed and released heat only exists in the regions near the front and back surfaces; the four mechanisms all release heat in the narrow n region close to the front surface; and Peltier and Thomson effects are the only mechanism of absorbed heat in the wide p region. The offset effects between released and absorbed heat make the total heat generated by the four mechanisms very small in the wide p region. With the environmental temperature increasing, the heat distribution features of each heat mechanism will remain unchanged, and except for the heat generated by the energy relaxation of the hot carrier, the released and absorbed heat generated by other mechanisms will increase in the whole c-Si active layer. With the output voltage increasing from 0 to 0.68 V, aside from the heat distribution of the energy relaxation of the hot carrier, the distributions of heat generated by other mechanisms show obvious threshold voltage effects, and only when the output voltage is larger than the threshold voltage will the heat distributions of different mechanisms be significantly changed by the variations of the output voltage.

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Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt

Khvostikova

Vlasov

Ber

et al. 2023

Preprint

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Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique is required. However high epitaxial temperature increases the unintentional doping level. Epitaxy from mixed Ga-Bi melts was investigated as a way to solve this problem. It was found that for growing relatively thick AlxGa1−xAs layers, it is expedient to use Ga-Bi melts with 20 at.% or less bismuth content. SIMS and Hall characterization of AlxGa1−xAs layers revealed that the growth of AlxGa1−xAs from mixed Ga-Bi melts reduces the background doping level (including carbon) and influences the native defect formation keeping the n-type conductivity. This effect is explained by the changes of the group III and V elements concentrations in the melt as well as Bi incorporation in the lattice.

show abstract

Dependence of the vertical‐tunnel‐junction GaAs solar cell on concentration and temperature

Cited by 3 publications

References 58 publications

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

A detailed analysis on the heat generated inside c-Si solar cell

Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt

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