Development and Production of Non-evaporable Getter Coatings for MAX IV

Pinto, P. Costa; Ahlbäck, Jonny; Al-Dmour, Eshraq; Bártová, Barbora; Grabski, Marek; Holliger, Benjamin; Santos, S. Marques dos; Nistor, V.; Pasquino, Chiara; Sapountzis, Antonios; Taborelli, M.; Wevers, I.

doi:10.18429/jacow-ipac2015-wepha019

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“…Considering the yield strength of commonly used vacuum chamber materials and the increased cost 2023 JINST 18 P11016 of baking at high temperatures, the activation temperature of the NEG film should be as low as possible [18][19][20]. In the NEG film with the combination of IV-B and V-B elements, TiZrV film has a low activation temperature and is widely used in ultra-high vacuum systems [21][22][23]. Studies have shown that the grain size of TiZrV thin film is related to the activation temperature.…”

Section: Introductionmentioning

confidence: 99%

Research on the deposition and properties characterization of novel conductive getter films on the inner wall of accelerator vacuum chamber

Ge,

Ma,

Zhu

et al. 2023

J. Inst.

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The new generation diffraction-limited storage ring has small vacuum chamber apertures, resulting in a distributed vacuum problem. Depositing a Ti-Zr-V NEG film layer on the inner face of vacuum chambers is an ideal solution for resolving the non-uniform vacuum distribution problem. However, Ti-Zr-V NEG coatings on the surface of the vacuum chamber increase its surface resistivity, which can intensify the wakefield impedance effect. This article proposes adding conductive Ag to the Ti-Zr-V NEG film. A novel Ti-Zr-V-Ag NEG film not only has good vacuum performance, but also has good conductivity. Ti-Zr-V-Ag NEG film is successfully prepared by magnetron sputtering. The activation kinetic processes and surface resistivity of Ti-Zr-V-Ag and Ti-Zr-V NEG films are detected in detail, and comparative research on the activation behavior and surface resistivity of Ti-Zr-V-Ag films deposited with various sputtering pressures is investigated. The results show that adding pure metallic silver to the Ti-Zr-V film effectively decreases the DC resistivity of the NEG films, and this reduction can be further enhanced by reducing the sputtering pressure. The activation kinetics behavior of the Ti-Zr-V-Ag film shows minor degradation compared with that of the Ti-Zr-V film.

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