2011
DOI: 10.2478/v10187-011-0058-3
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Development and Fabrication of TiO2 Tip Arrays for Gas Sensing

Abstract: Titanium oxide thin films were deposited at room temperature by reactive magnetron sputtering in a mixture of oxygen and argon on oxidized silicon substrates. The optimal etching characteristics of TiO 2 films by reactive ion etching (RIE) and RIE with inductively coupled plasma source (ICP) were investigated. Patterning of TiO 2 tip arrays by electron beam lithography and dry etching were developed. Different spot sizes 200 and 500 nm in diameter and with spacing 500 and 1000 nm were investigated with regards… Show more

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Cited by 7 publications
(7 citation statements)
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“…Evidently, a reduction of the geometric cross-section for the conduction paths and the island formation are responsible for the strong increase of resistivity with increase of temperature and free electrons in the conduction band and these free electrons increase electrical conductivity. In our samples the resistivity is increased with increasing temperature and the repetition of the layers the resistivity of the present films are in the range reported for other multilayer films [11]. The resistivity is increased slowly with increasing temperature.…”
Section: Plots Of Resistivity ρ Versus Temperature T For the Filmsupporting
confidence: 78%
“…Evidently, a reduction of the geometric cross-section for the conduction paths and the island formation are responsible for the strong increase of resistivity with increase of temperature and free electrons in the conduction band and these free electrons increase electrical conductivity. In our samples the resistivity is increased with increasing temperature and the repetition of the layers the resistivity of the present films are in the range reported for other multilayer films [11]. The resistivity is increased slowly with increasing temperature.…”
Section: Plots Of Resistivity ρ Versus Temperature T For the Filmsupporting
confidence: 78%
“…The preferred surface orientations of both nickel oxide powder and microblast deposited NiO x coatings were the planes (111) and (200) ( Figure 5). 21 The signature of the crystallographic plane (220) at 20~ 58  was not detected for the microblast NiO x coatings 21 . 52,53 This is in addition to the very broad peak at ~861 eV, which is the shake-up satellite peak of Ni 2+ and Ni 3+ .…”
Section: Crystal and Chemical Compositions Of Microblast Deposited Nimentioning
confidence: 99%
“…3,4 The intrinsic p-type conductivity of NiO x is mainly related to its non-stoichiometric nature where Ni 3+ centers constitute the oxide defects through which holes are transferred. 5 Because of this interesting combination of electrical and optical properties, NiO x has been considered for energy storage applications, [6][7][8] in electrochromic devices as transparent electrode, 9-17 in optoelectronic devices as electron barrier, 18,19 for gas sensing, 20,21 and, more recently, in dye-sensitized solar cells (DSCs) as photoactive cathode. [22][23][24][25][26][27][28][29][30][31][32][33][34][35] The utilization of NiO x in such diverse applications has been accompanied by the development of various preparation methods and deposition techniques, aimed at producing NiO x -based materials with variable chemical composition, electrical resistivity, compactness and morphology.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, an accurate control of the refractive index of individual layers of optical multilayer structures is highly desirable. In case of Ni x O films, it is well‐known that the composition affects their structural properties and surface morphology . However, the impact of composition on the refractive index has not been studied in detail yet.…”
Section: Introductionmentioning
confidence: 99%