Development and evaluation of AuSi eutectic wafer bonding

Lin, Yu Ching; Baum, Mario; Haubold, Marco; Frömel, Jörg; Wiemer, Maik; Geßner, Thomas; Esashi, Masayoshi

doi:10.1109/sensor.2009.5285519

Cited by 26 publications

(20 citation statements)

References 3 publications

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“…In most cases Si is coming from the substrate, what means, that it seems to be available unlimited. So the solidification starts with the mismatch of eutectic mixture at a certain process temperature [11].…”

Section: Theoretical Aspectsmentioning

confidence: 99%

“…The bonding temperature, tool pressure and duration are seen to be the most important parameter for reaching a high bonding quality. The most influence on flow behavior is given by temperature and pressure [11]. Thus, the temperature ranged from 390 °C to 400 °C while a tool pressure of 100 kPa to 500 kPa was applied between 5 minutes and over a period of 20 minutes respectively for the AuSi wafers.…”

Section: Bonding Processesmentioning

confidence: 99%

“…According to MIL-STD883 G, allowing a reject rate of 5x10 -08 mbar*l/s, the bonding technique can be used for hermetic encapsulation. In [11] Lin described an FTIR method with a higher sensitivity of detecting molecules and the possibility to evaluate hermeticity down to a leakage rate of 1x10 -11 mbar*l/s. This test should fit the requirements of the test samples like the very small volume better than others.…”

Section: Hermeticitymentioning

confidence: 99%

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Eutectic wafer bonding for 3-D integration

Baum

Jia

Haubold

et al. 2010

3rd Electronics System Integration Technology Conference ESTC

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Successful commercialization of MEMS products extremely depends on cost factors. Especially the role of integration technologies like packaging at different levels, combining MEMS with integrated circuits, and to realize 3-dimensional packaged devices is more important than ever. Bonding technologies at wafer level are key factors for 3-d integration, realizing the mechanical bond and fulfilling certain requirements like strength, hermeticity, and reliability as well as the electrical interconnection of the different functional components. From a great variety of bonding techniques eutectic bonding has got a special importance today because both hermetically sealed packages and electrical interconnects could be performed within one bonding process. Furthermore, there are some advantages such as low processing temperature, low resulting stress, and high bonding strength. These properties are mainly investigated up today. Since the early 90-ies eutectic wafer bonding is known from very large scale integration (VLSI) and is used very often in industry. Even before that time eutectic bond processes were already used in the field of chip bonding.Within this paper the development and investigation of at least two eutectic bonding technologies will be described and characterized. Although the mechanical and micro structural properties of the bond will be shown, the realization and test of electrical interconnects is focused very clearly. With an integration of certain test structures the bonding strength, the electrical properties, and the hermeticity of eutectic bonds could be measured and evaluated. At least it will be concluded with an outlook for the feasibility of eutectic bonding in 3-d integrated smart micro systems.

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Section: Theoretical Aspectsmentioning

confidence: 99%

Section: Bonding Processesmentioning

confidence: 99%

Section: Hermeticitymentioning

confidence: 99%

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Eutectic wafer bonding for 3-D integration

Baum

Jia

Haubold

et al. 2010

3rd Electronics System Integration Technology Conference ESTC

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“…Efforts have been made to improve the Au/Si bonding performance. It was reported by Chen et al [6], Lin et al [7] and Jing et al [8] that an improved contact interface can be obtained by conducting the Au/a-Si (amorphous Si) reaction. Previous works about the Au/a-Si bonding were all based on the PECVD method to form the amorphous Si on top of the Si wafer before bonding.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Au/a-Si eutectic wafer level bonding process

Huang

Zhang

et al. 2014

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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This paper presents a new method for achieving Au/aSi (amorphous Si) eutectic wafer-level bonding. The Si-Glass wafer bonding was conducted with Au layer patterned on glass wafer and amorphous Si layer on silicon wafer. The amorphous Si here was transformed from the single crystal silicon by the Argon implantation process. A novel torsional strength test structure was proposed and applied for characterization of Au/Si bonding strength. The anti-corrosion property of the bonded wafers was evaluated in the KOH thinning process. The performance of the Au/Si bond with respect to the bond area were studied in detail. Results indicated that the Au/a-Si bonding exhibited much better performance compared with the conventional Au/c-Si bonding.

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“…They showed that an a-Si layer on a (1 0 0) Si wafer rapidly reacts with the Au layer and forms a uniform Au(Si) liquid alloy, which prevents the formation of air voids at the bond interface. Lin et al studied the development of and evaluated Au Si eutectic wafer bonding [16]. In their work, material composition, adhesion layer, electrical insulation, bonding parameters and surface pre-treatments were discussed in terms of bond performance.…”

Section: Introductionmentioning

confidence: 99%