Development and Characterization of AlOx/SiNx :B Layer Systems for Surface Passivation and Local Laser Doping

Norouzi, Mohammad Hassan; Saint‐Cast, Pierre; Jaeger, Ulrich; Steinhauser, Bernd; Benick, Jan; Buechler, Andreas; Bitnar, Bernd; Palinginis, Phedon; Neuhaus, Holger; Aßmus, W.; Hofmann, M.

doi:10.1109/jphotov.2017.2719278

Cited by 14 publications

(10 citation statements)

References 30 publications

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“…The p‐doping can consist of both boron (from the SiN x :B layer) and aluminum (from the Al 2 O 3 layer) as has been shown in Ref. . The profiles are scaled to match the sheet resistances R sh , which are locally determined by 4‐point‐probe measurements next to the ECV measuring points .…”

Section: Resultsmentioning

confidence: 99%

“…In this work, we demonstrate the low‐ohmic electrical contacting of p‐doped surfaces with industrial relevant finger widths of w f ≈ 55 μm using a commercial fire‐through pure Ag screen‐printing paste. We use laser‐assisted diffusion out of the so‐called “pPassDop” passivation stack layer to locally introduce a rear side back surface field (BSF) on p‐type silicon wafers; see Figure (a). The used “pPassDop” layer consists of a boron‐doped silicon nitride (SiN x :B) layer on top of a thin aluminum oxide (Al 2 O 3 ) passivation layer.…”

Section: Introductionmentioning

confidence: 99%

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Low‐Ohmic Contacting of Laser‐Doped p‐Type Silicon Surfaces with Pure Ag Screen‐Printed and Fired Contacts

Lohmüller

Werner

Norouzi

et al. 2017

Physica Status Solidi (a)

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The state‐of‐the‐art low‐ohmic electrical contacting of highly boron‐doped silicon surfaces is based on the use of screen‐printed and fired silver‐aluminum (Ag‐Al) contacts. For these contacts, metal crystallites with depths of up to a few microns are observed at the interface. For screen‐printed and fired Ag contacts on phosphorus‐doped surfaces, the observed crystallite depths are much smaller. In this work, low‐ohmic electrical contacting of local laser‐doped p‐type silicon surfaces with commercial pure Ag screen‐printing paste are demonstrated. The doping layer is based on the “pPassDop” approach, which serves as a passivation layer on the rear side of p‐type silicon solar cells. The specific contact resistances are measured down to 1 mΩ cm2 for p‐type doping densities of about 3 × 1019 cm−3 at the silicon surface and finger widths of around 55 μm. Microstructure analysis reveals the formation of numerous small Ag crystallites at the interface with penetration depths of less than 80 nm. A first implementation of the “pPassDop” approach on 6‐inch p‐type Cz‐Si bifacial solar cells using solely Ag contacts on both sides results in a peak front side energy conversion efficiency of 19.1%, measured on a black chuck with contact bars on both sides.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low‐Ohmic Contacting of Laser‐Doped p‐Type Silicon Surfaces with Pure Ag Screen‐Printed and Fired Contacts

Lohmüller

Werner

Norouzi

et al. 2017

Physica Status Solidi (a)

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“…11. The latter process suffers from nonuniformity due to the close overlapping of laser pulses, which have a Gaussian spatial distribution in energy density [44], [45]. This nonuniformity is Fig.…”

Section: Selective Area Widthmentioning

confidence: 99%

Characterization of Epitaxial Heavily Doped Silicon Regions Formed by Hot-Wire Chemical Vapor Deposition Using Micro-Raman and Microphotoluminescence Spectroscopy

Rahman

Nguyen

Tarazona

et al. 2018

IEEE J. Photovoltaics

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We report on the characterization of heavily boron doped epitaxial silicon regions grown in a hot-wire chemical vapor deposition tool, using micro-Raman and photoluminescence spectroscopy. In particular, the use of this approach for emitter fabrication in an interdigitated back contact silicon solar cell is studied, by analyzing its suitability concerning selective growth, uniformity, anneal time, and luminescent defects. We show that by reducing the silane flow rate, both the required postanneal time and intensity of defect luminescence are reduced. Furthermore, we show that selective area growth does not affect either the quality of the films or the sharpness of the resulting lateral doping profile. The uniformity of the doping is shown to be better than that achieved using laser doping.

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“…Another example for which high‐precision alignment is substantially important is the p ‐type silicon bifacial passivated emitter and rear locally diffused (biPERL) solar cell concept that is based on the “pPassDop” approach . Thereby, the pPassDop layer stack applied on the back consists of a thin aluminum oxide (Al 2 O 3 ) layer capped by a boron‐doped silicon nitride (SiN X :B) layer.…”

Section: Introductionmentioning

confidence: 99%

“…9,11 Another example for which high-precision alignment is substantially important is the p-type silicon bifacial passivated emitter and rear locally diffused (biPERL) solar cell concept 12,13 that is based on the "pPassDop" approach. 14 The laser process also forms a local BSF, if just a conventional, not boron-doped SiN X layer is applied on top of the Al 2 O 3 layer (the Al 2 O 3 layer is the only doping source). We recently demonstrated this for p-type silicon biPERL solar cells that are very similar to biPERCs.…”

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confidence: 99%

High‐precision alignment procedures for patterning processes in solar cell production

Weber

Demant

Lohmüller

et al. 2019

Progress in Photovoltaics

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We present two approaches for high‐accuracy aligning of patterning processes with each other when fabricating solar cells. We introduce the approaches on the example of two different patterning processes of which one is adjustable (laser process) and one is not adjustable (screen‐printing process). The basic idea is to measure the coordinates of the applied structures of each involved patterning process at discrete grid points with respect to a reference coordinate system. We chose the grid points such that they completely define the final cell pattern. Then, we adjust the grid point coordinates of one of the patterning processes (the laser process) according to the pattern of the other process (the screen‐printing process). The laser then performs the patterning by connecting the corrected grid points with each other in the desired direction. We perform the associated high‐precision measurement of the patterns' coordinates by using either a high‐precision offline coordinate measuring machine or a high‐resolution inline camera system with subsequent computer‐based data processing. The latter inline method enables high throughput and is, in turn, of great interest for mass production of solar cells. In this paper, we demonstrate the alignment procedure approaches on “pPassDop” solar cells by adjusting a locally applied laser process to the directly following screen‐printing step. This proof of principle includes both above‐mentioned methods for coordinate determination in separate cell batches. Our innovative alignment procedures so far demonstrated the successful matching of 40‐μm‐wide screen‐printed contact fingers to 70‐μm‐wide laser‐processed lines over the entire area of 6‐inch solar cells.

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Development and Characterization of AlOx/SiNx :B Layer Systems for Surface Passivation and Local Laser Doping

Cited by 14 publications

References 30 publications

Low‐Ohmic Contacting of Laser‐Doped p‐Type Silicon Surfaces with Pure Ag Screen‐Printed and Fired Contacts

Low‐Ohmic Contacting of Laser‐Doped p‐Type Silicon Surfaces with Pure Ag Screen‐Printed and Fired Contacts

Characterization of Epitaxial Heavily Doped Silicon Regions Formed by Hot-Wire Chemical Vapor Deposition Using Micro-Raman and Microphotoluminescence Spectroscopy

High‐precision alignment procedures for patterning processes in solar cell production

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