Development and Characterization of 100 Gb/s Data Communication VCSELs

Murty, M. V. R. K.; Wang, Jingyi; Harren, Ann Lehman; Cheng, An-Nien; Dolfi, David W.; Feng, Zheng-Wen; Sridhara, Aaditya; Joyo, S. T.; Chu, Jason; Giovane, Laura M.

doi:10.1109/lpt.2021.3069146

Cited by 26 publications

(16 citation statements)

References 9 publications

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“…Vertical-cavity surface-emitting lasers (VCSELs) which are low-power consumption and low cost have gained attention for wide range of applications such as optical communications and sensing. [1][2][3] Performance evolution of VCSELs with a traditional approach, namely, improvement of materials and structures of VCSELs has been reported. 2,3 On the other hand, another approach in which degree of spin polarization is utilized in VCSELs has also been widely reported.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3] Performance evolution of VCSELs with a traditional approach, namely, improvement of materials and structures of VCSELs has been reported. 2,3 On the other hand, another approach in which degree of spin polarization is utilized in VCSELs has also been widely reported. [4][5][6] The spin-controlled VCSELs (spin-VCSELs) indicate interesting characteristics of such as threshold reduction, lasing with circular polarizations, and high speed polarization modulation.…”

Section: Introductionmentioning

confidence: 99%

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Injection-locked spin-VCSELs for coherent optical communications

2022

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We numerically investigate characteristics of spin-controlled vertical-cavity surface-emitting lasers (spin-VCSELs) under injection locking by using spin-flip rate equations. Generation of a modulation sideband whose phase is correlated with an injected light into a spin-VCSEL, is an attractive application of spin-VCSELs to frequency-shifted local oscillators in coherent optical communication systems. Our results indicate that the spin polarization modulation with a high degree of spin polarization is important for efficient generation of strong modulation sideband. Additionally, matching the modulation frequency and polarization mode splitting in the spin-VCSEL contribute to achieve efficient and ideal single sideband generation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Injection-locked spin-VCSELs for coherent optical communications

2022

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“…Вертикально-излучающие лазеры (ВИЛ) спектрального диапазона 1300 nm перспективны для создания активных оптических кабелей (оптических интерконнектов), требуемых для передачи информации на относительно дальние расстояния (свыше 1 km). Данный тип лазеров также представляет интерес с точки зрения гибридной интеграции с кремниевой фотоникой [1], создания кремниевых фотонных [2] и электронных микросхем, модуляторов. Отдельной областью применения ВИЛ спектрального диапазона 1300 nm является создание сенсорных систем и источников излучения для оптической беспроводной передачи данных [3].…”

Section: Introductionunclassified

Исследование характеристик сверхрешетки InGaAs/InAlGaAs для вертикально-излучающих лазеров спектрального диапазона 1300 nm

Blokhin¹,

Babichev²,

Gladyshev³

et al. 2021

Журнал Технической Физики

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X-ray structural analysis and photoluminescence spectroscopy techniques were used to study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm range lasers grown by molecular beam epitaxy. It is shown that the grown heterostructures have a high crystal quality. The perpendicular lattice mismatch of the average crystal lattice constant of the InGaAs/InAlGaAs superlattice with respect to the crystal lattice constant of the InP substrate is estimated at ~ +0.01%. An analysis of the photoluminescence spectra made it possible to conclude that the contribution of Auger recombination is insignificant in the studied range of excitation power density. Studies of vertical-cavity surface-emitting lasers with an active region based on the InGaAs/InAlGaAs superlattice made it possible to estimate the gain coefficient at a level of 650 cm-1 for the standard logarithmic approximation of the dependence of the gain on the current density. The transparency current density of the laser was ~150 А/cm2, which is comparable to the record low values for the case of highly strained InGaAs-GaAs and InGaAsN-GaAs quantum wells in the spectral ranges of 1200 nm and 1300 nm, respectively.

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“…Figure16. Selected results for 3 dB bandwidths of nm VCSELs at RT (unless stated otherwise)[22,57,59,[61][62][63]65,81,83,[116][117][118][119][120][121][122][123][124][125][126][127][128][129][130][131][132][133].…”

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confidence: 99%

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

et al. 2022

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Vertical-cavity surface-emitting lasers (VCSELs) have made remarkable progress, are being used across a wide range of consumer electronic applications, and have particularly received much attention from the telecom and datacom industries. However, several constraints are thus currently being tackled to improve the device characteristics and modulation formats to meet the various demanding requirements of the future 800 GbE and 1.6 TbE Ethernet standards. This manuscript discusses the device characteristics and the key considerations in the device designs and optimizations. Finally, we elucidate the latest developments and vital features of modern 850 nm VCSELs for high-speed interconnects.

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Development and Characterization of 100 Gb/s Data Communication VCSELs

Cited by 26 publications

References 9 publications

Injection-locked spin-VCSELs for coherent optical communications

Injection-locked spin-VCSELs for coherent optical communications

Исследование характеристик сверхрешетки InGaAs/InAlGaAs для вертикально-излучающих лазеров спектрального диапазона 1300 nm

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

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