Developing functional Prototypes by package modification using plasma FIB technology

Gonzales, Michael; Cruz, Roddy; Parley, Martin; Lau, Jonathan; DiBattista, Michael; Routh, Bryan; Landin, Trevan; Carleson, Peter; Huggins, Ebb; Mani, Kenny

doi:10.1109/ipfa.2012.6306324

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…Decomposition gases are XeF 2 and H 2 O, and deposition gases are Platinum, and SiO 2 . [40][41][42] The completion of de-layering can be determined with the real-time SEM monitoring and the etching can stop precisely at the layer of interest.…”

Section: Fa Technique and Experimentsmentioning

confidence: 99%

Two planar polishing methods by using FIB technique: Toward ultimate top-down delayering for failure analysis

et al. 2015

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Presently two major limiting factors are hindering the failure analysis (FA) development during the semiconductor manufacturing process and technology improvement: (1) Impossibility of manual polishing on the edge dies due to the amenability of layer peeling off; (2) Abundant demand of multi-locations FA, especially focusing different levels of layers simultaneously. Aiming at resolving these limitations, here we demonstrate two unique high precision polishing methods by using focused ion beam (FIB) technique. One is the vertical top down chemical etching at the aimed location; the other one is the planar top down slicing. Using the FIB for delayering not only solves these problems mentioned above, but also offers significant advantages over physical planar polishing methods such as: (1) having a better control of the delayering progress, (2) enabling precisely milling at a region of interest, (3) providing the prevention of over-delayering and (4) possessing capability to capture images at the region of interest simultaneously and cut into the die directly to expose the exact failure without damaging other sections of the specimen.

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Section: Fa Technique and Experimentsmentioning

confidence: 99%

Two planar polishing methods by using FIB technique: Toward ultimate top-down delayering for failure analysis

et al. 2015

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“…[6][7][8][9][10][11][12][13][14] These are divided into several sections-the first covers TSVs, both filled and open; second, die-to-die bonding is discussed; then die-to-package bonding. In many cases, the plasma-FIB employs other upstream analysis techniques and die/package-level design data to provide important targeting information on where to perform the physical analysis.…”

Section: Case Studiesmentioning

confidence: 99%

“…10 Such package edit is analogous to circuit-level editing utilized with GaFIBs 1 and demonstrates the flexibility and utility of the (plasma) FIB as a tool for supporting the development of new processes and products.…”

Section: Case Studiesmentioning

confidence: 99%

Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology

Altmann

Young²

2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Today three-dimensional system-in-package integration together with advanced interconnect technologies based on through silicon vias, through encapsulant vias, and microbumps are considered some of the most promising enabling technologies for "More than Moore" solutions. These technologies involve vertical die stacking or chip embedding with high-density interconnects and are based on combinations of process steps that come from formerly strictly separated technology areas. Thus, there is an increasing need to understand a large number of different interface properties, to control and optimize processes, and to avoid defect formation that could affect reliability. This complexity, in terms of design, new materials, and material combinations, also requires the development of new failure analysis tools to support these developments. The application potential of a new fast plasma focused ion beam (FIB) system for metrology and failure analysis is demonstrated in several selected case studies. The higher material removal rate of this system improves the range of application fields and/or the analysis throughput. This makes the plasma-FIB a very attractive tool for the analysis of relatively large interconnect structures without any need for mechanical preparation steps.

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Localized FIB delayering on advanced process technologies

Donnet¹,

Sidorov²,

Carleson³

et al. 2014

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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Developing functional Prototypes by package modification using plasma FIB technology

Cited by 4 publications

References 6 publications

Two planar polishing methods by using FIB technique: Toward ultimate top-down delayering for failure analysis

Two planar polishing methods by using FIB technique: Toward ultimate top-down delayering for failure analysis

Site-specific metrology, inspection, and failure analysis of three-dimensional interconnects using focused ion beam technology

Localized FIB delayering on advanced process technologies

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