Develop Parasitic Inductance Model for the Planar Busbar of an IGBT H Bridge in a Power Inverter

Zhang, Ning; Wang, Shuo; Zhao, Hui

doi:10.1109/tpel.2015.2396529

Cited by 30 publications

(4 citation statements)

References 15 publications

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“…Among different stressors impacting the dc-link capacitor, current harmonics is a leading cause (Jedtberg et al, 2017). The stray inductance of the busbar may resonate with the dc-link capacitor, producing current harmonics and overheating issues in the capacitor (Zhang et al, 2015;Alizadeh et al, 2018;Callegaro et al, 2018;Wang et al, 2020;Niu et al, 2021;Tahir et al, 2021;Zhao et al, 2021). For dc-link of high power modular converters, non-laminated busbar is attractive owing to its large current capacity, ease of manufacturing and low cost (Liang et al, 2021); however, the adverse effects may get even worse due to its large stray inductance (Callegaro et al, 2018;Li et al, 2018;Alizadeh and Alan Mantooth, 2021).…”

Section: Introductionmentioning

confidence: 99%

Unit Partition Resonance Analysis Strategy for Impedance Network in Modular Power Converters

Tahir

Hu²,

Liang³

et al. 2022

Front. Energy Res.

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In modular power converters, the dc-link capacitor has the highest failure rate due to thermal stress, reducing system performance and reliability. Current harmonics are one of the prominent causes of thermal stress on the dc-link capacitor that may get instigated by the resonance between the dc-link capacitor and stray inductance of the busbar. The dc-link capacitor current harmonics mitigation through busbar design optimization has not been reported. The challenge lies in analyzing the profound resonance characteristics of high order dc-link busbar impedance network as no insightful information can be obtained from impedance analyzers. This paper features a new strategy for high power modular converters that splits the high order dc-link busbar impedance network into corresponding lower-order sub-units. Then, the required relationship between resonating components and corresponding resonance frequencies is attained by exploiting the structural symmetry of the standard modular power unit as well as the inheritance relationship between sub-circuit units and the combined network. Finally, leveraging the derived resonant frequencies expressions, busbar structure is optimized, and up to 23% reduction in capacitor RMS current is achieved. Simulation and experimental results are provided to validate the efficacy of the proposed analysis method. The in-depth theoretical study featured in this paper can dictate not only the busbar design optimization but also a key to improve capacitor lifetime and reliability of the system.

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Section: Introductionmentioning

confidence: 99%

Unit Partition Resonance Analysis Strategy for Impedance Network in Modular Power Converters

Tahir

Hu²,

Liang³

et al. 2022

Front. Energy Res.

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“…With the development of power electronic technology and semiconductor devices, large capacity, integration, high frequency and high power density have gradually become the development trends of power electronic converters [1][2][3]. Large-capacity converters are widely used in energy storage and grid connection [4], electric vehicles [5,6], solid-state transformers [7], high-speed rail [8] and other occasions.…”

Section: Introductionmentioning

confidence: 99%

Optimized Design of Laminated Busbar for Large-Capacity Back-to-Back Converters

Wang

2022

Energies

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As a key component of a large-capacity converter, the laminated busbar can improve the reliability, integration and power density of the converter and has great advantages in reducing the parasitic inductance of the switching loop. The laminated busbar suitable for a high-capacity back-to-back converter has a complex structure, and couple with each side converter. It has been challenging to optimize the equivalent inductance by using the traditional single-converter busbar design method. In this paper, the coupling inductance model of the back-to-back converter is established, and the relationship between the voltage stress of the switch tube and the stray inductance is analyzed in detail. Based on this, the design principle of the laminated busbar is proposed, and an optimized design structure of the laminated busbar suitable for the large-capacity back-to-back converter is given. Finally, the results were effectively verified by simulation analysis and a 180 kW integrated intermediate frequency auxiliary power converter.

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“…This topic is widely studied and several papers can be found in the literature. The busbar's circuit models which include both self and mutual inductance are developed based on the identified current paths in [22]. Papers [23] propose a method to model the inductance of a busbar by decomposing the busbar into numerous elementary LR segments based on the physical dimensions and structures of the busbar.…”

Section: Introductionmentioning

confidence: 99%

Low-Stray Inductance Optimized Design for Power Circuit of SiC-MOSFET-Based Inverter

Liu

Meng

et al. 2020

IEEE Access

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High frequency converters based on silicon carbide (SiC) semiconductors are becoming popular, but due to the integration parameters, they are very likely to generate high voltage overshoot and large oscillation, which increase the voltage stress and cause EMC problems. To suppress the voltage overshoot and oscillation, the mechanism is firstly analyzed. Stray inductance is a culprit in causing these problems. To minimize the inductance of power circuit, this paper proposes optimization method including better design of bus-bar structure and parallel connection of snubber capacitors by means of model analysis and formula derivation. To evaluate the method, an inverter model and a prototype were built, several optimization schemes were compared by co-simulation and experimental tests. Experimental results show that the stray inductance of the new bus-bar is 6.4% of the traditional bus-bar. The loop-inductance can be reduced by 46.4% by connecting the capacitors in parallel, and the switching losses can be reduced by 30.8%. This analysis provides guidelines for a full SiC inverter design. INDEX TERMS SiC-MOSFET, low stray inductance, design method, double-pulse test.

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Develop Parasitic Inductance Model for the Planar Busbar of an IGBT H Bridge in a Power Inverter

Cited by 30 publications

References 15 publications

Unit Partition Resonance Analysis Strategy for Impedance Network in Modular Power Converters

Unit Partition Resonance Analysis Strategy for Impedance Network in Modular Power Converters

Optimized Design of Laminated Busbar for Large-Capacity Back-to-Back Converters

Low-Stray Inductance Optimized Design for Power Circuit of SiC-MOSFET-Based Inverter

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