Deterministic control of ferroelastic switching in multiferroic materials

Balke, Nina; Choudhury, Samrat; Jesse, Stephen; Huijben, Mark; Chu, Ying Hao; Baddorf, Arthur P.; Chen, Lei; Ramesh, R.; Kalinin, Sergei V.

doi:10.1038/nnano.2009.293

Cited by 341 publications

(375 citation statements)

References 38 publications

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“…While the (110) BFO shown in Figure 1a maintains a single-domain texture, the (100) BFO shown in Figure 1b exhibits striped domains lying along the o0104 direction with the two variants in the [110] and directions across the 711 or 1091 DWs. 13,14 Out-of-plane PFM measurements (not shown) confirmed that the out-of-plane components are pointing downward, that is, from the surface to the substrate. The rectangular device channels were defined by an electrode gap of 4 mm and a width of 30 mm by e-beam lithography and Au-electrode liftoff.…”

Section: Methodsmentioning

confidence: 79%

Single ferroelectric-domain photovoltaic switch based on lateral BiFeO3 cells

Sung

Lee

et al. 2013

NPG Asia Mater

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The bistability of ferroelectric polarization states serves as a basis for solid-state memory. This phenomenon can also yield an interesting photovoltaic effect in such a way that the directional photocarrier motion follows the inherent potential gradient imposed by the ferroelectric polarization vectors. Here, we demonstrate a single-domain photovoltaic switch based on lateral BiFeO 3 channels, in which such photovoltaic switching is achieved by a coherent single-domain reversal with a short electrical pulse. We then provide visual evidence for such operations with a series of spatially and spectrally resolved short-circuit photocurrent images. Specifically, we reveal that the sequential photovoltaic current images directly reflect the remanent polarization states of a single-domain channel. We also verify that, in multidomain channels, diffusive switching characteristics are determined not only by the internal polarization vector within the domain but also by oxygen vacancy accumulation at the domain walls. Keywords: ferroelectrics; multiferroics; oxide photonics; photovoltaics INTRODUCTIONHomogeneous light illumination on non-centrosymmetric crystals, such as ferroelectrics, in the intrinsic absorption range can give rise to an interesting photovoltaic effect, dubbed as the bulk photovoltaic effect. 1,2 This effect is distinct from that of typical semiconductor p-n junction photovoltaics and excitonic heterojunction photovoltaics in that the photogenerated carriers can be separated along the inherent polar directions, ensuing the unidirectional photocurrent (I ph ) and photovoltage (V ph ), associated with the spontaneous ferroelectric polarization vector (P s ). Therein, the open-circuit voltage (V oc ) is determined by the magnitude of the remanent polarization of ferroelectrics, and it can be additively as large as a few hundreds of volts, although the short-circuit current (I sc I ph at 0 V) is low due to the insulating character of the system. This phenomenon has been recently revisited with a small band-gap, BiFeO 3 (BFO) ferroelectric, from which a substantially higher photon-to-charge generation efficiency can be achieved in the visible range compared with that of other insulating ferroelectrics. [3][4][5][6][7][8] reported that diodelike rectification follows the polarization-dependent interface bandbending of BFO single-crystal slabs that are electrically switchable, that is, V oc and I sc are defined by the remanent polarization directions. In general, the spatial extent of spontaneous polarization vectors in ferroelectric crystals is typically manifested as domains (typically spanning over a few mm in size) and domain walls (DW, 1-2 nm in

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Section: Methodsmentioning

confidence: 79%

Single ferroelectric-domain photovoltaic switch based on lateral BiFeO3 cells

Sung

Lee

et al. 2013

NPG Asia Mater

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“…In particular, they have predicted that flexoelectricity might be used to enhance pieozoelectric responses above bulk values. (ii) Recently, there have been many studies on the domains and domain walls of BiFeO 3 thin films owing to their scientific interest and potential applications [41,[51][52][53]. BiFeO 3 thin films with a monoclinic distortion undergo lattice deformation during polarization switching (i.e.…”

Section: Future Perspectivesmentioning

confidence: 99%

Giant flexoelectric effect through interfacial strain relaxation

Lee

Noh

2012

Phil. Trans. R. Soc. A.

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Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m −1 by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

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“…8 As far as Scanning Probe Microscopy (SPM) is concerned, the recent developments in functional imaging-modes have been paralleled with a growing interest in studying various local phenomena. A few examples of such phenomena include electrical conduction at ferroelectric/ferroelastic domain walls, [9][10][11][12] polarization dynamics in ferroelectrics, [13][14][15][16][17][18] temperature/time/ voltage dependent study of ergodicity (time dependence) of polarization in relaxor-ferroelectrics, 14,19 and local magnetoelectricity. [20][21][22][23][24][25][26][27][28] Probing such local phenomena essentially requires measuring a response I ij (x i , P j ) on an X × Y grid, as a function of a spectral parameter P j (j = 1,…,M); where x i is the spatial coordinate index (i = 1,…,N; N = X × Y).…”

Section: Introductionmentioning

confidence: 99%

Sequential piezoresponse force microscopy and the ‘small-data’ problem

et al. 2018

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The term big-data in the context of materials science not only stands for the volume, but also for the heterogeneous nature of the characterization data-sets. This is a common problem in combinatorial searches in materials science, as well as chemistry. However, these data-sets may well be 'small' in terms of limited step-size of the measurement variables. Due to this limitation, application of higher-order statistics is not effective, and the choice of a suitable unsupervised learning method is restricted to those utilizing lower-order statistics. As an interesting case study, we present here variable magnetic-field Piezoresponse Force Microscopy (PFM) study of composite multiferroics, where due to experimental limitations the magnetic field dependence of piezoresponse is registered with a coarse step-size. An efficient extraction of this dependence, which corresponds to the local magnetoelectric effect, forms the central problem of this work. We evaluate the performance of Principal Component Analysis (PCA) as a simple unsupervised learning technique, by pre-labeling possible patterns in the data using Density Based Clustering (DBSCAN). Based on this combinational analysis, we highlight how PCA using non-central second-moment can be useful in such cases for extracting information about the local material response and the corresponding spatial distribution.

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Deterministic control of ferroelastic switching in multiferroic materials

Cited by 341 publications

References 38 publications

Single ferroelectric-domain photovoltaic switch based on lateral BiFeO3 cells

Single ferroelectric-domain photovoltaic switch based on lateral BiFeO3 cells

Giant flexoelectric effect through interfacial strain relaxation

Sequential piezoresponse force microscopy and the ‘small-data’ problem

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