Determining the lattice relaxation in semiconductor layer systems by x-ray diffraction

Abstract

This paper illustrates the procedure for extracting structural information available from x-ray diffraction space mapping and topography. The methods of measuring, the residual strain, macroscopic tilts, microscopic tilts and their lateral dimensions, and the strain field disruption emanating from the interfacial defects are presented. Partially relaxed thick InGaAs layers on GaAs substrates were studied and it was concluded that the relaxation and macroscopic tilting were anisotropic, the microscopic tilting reduced with thickness, and the interfacial disruption did not continue to increase with increasing relaxation. A ‘‘mosaic grain growth’’ model is postulated to account for the diminishing microscopic tilt spread and increasing topographic contrast with layer thickness.

Microstructure and magnetic properties of FeTaN films

“…In samples of thickness 3000 A and 8000 A, a maximum disorientation of 7 O and 5 O is reached, respectively. Tilt of (1 10) crystallites is suppressed in thicker layers [6], however the FWHM of the (211) peak increased to 16 k 3O, as N was added, indicating a broader distribution of { 1 lo} orientations. Generally speaking, both the average deviation from parallel orientation and the width of the distribution of (1 10) planes increases with pN2.…”

Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers

“…High-resolution X-ray diffraction (HRXRD) was used in order to measure the Ge and C amount and the layer thickness of the SiGeC layers on an array of openings in the chips. High-resolution reciprocal lattice mapping (HRRLM) around (1 1 3) reflection was performed to analyze the misfit parameters and the evolution of defects in the SiGeC epitaxial layers [12]. By decreasing the spot size of the X-ray beam (1-10 mm in diameter) and applying a mirror in the primary optics, a narrow beam with high intensity was obtained for analyzing the chips.…”

Mechanisms of diffusion-enhanced thermal stability of Si/Si1−xGex/Si heterostructures grown by chemical vapor deposition

“…the sample and the detector are rotated with a ratio of 1:2, while a small offset of 7Do is applied between each scan. This powerful technique enables the determination of mismatch parallel and perpendicular to the growth direction [8]. Finally, the doping profiles were retrieved by secondary ion mass spectrometry (SIMS) using Cs + primary ions for the detection of phosphorus, while O 2 + was used to detect boron and germanium.…”