Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers

Hållstedt, Julius; Suvar, Erdal; Menon, C.; Hellström, Per‐Erik; Östling, Mikael; Radamson, Henry H.

doi:10.1016/j.mseb.2003.10.062

“…ିଵଶ.ହଷହ ಸಹ ర [15] Although an increase in the etch rate is observed in SiGe epitaxy, its growth rate is still higher compared to that of Si. The Ge content in SiGe layers is also an important factor which is obtained from the flux/partial pressure ratio between Ge and Si (21) as shown in the following equation:…”

Section: Ecs Transactions 33 (6) 581-593 (2010)mentioning

confidence: 99%

“…Tremendous experimental results have been presented on the growth and integration of SiGe layers for different applications, meanwhile, remarkably fewer reports are available about the modeling of the growth (7)(8)(9). This point is highlighted when selective epitaxial growth (SEG) faces pattern dependency in which the SiGe layer profile is affected by the pattern layout (10)(11)(12)(13)(14)(15)(16)(17). During recent years, various methods have been proposed to decrease the pattern dependency in SEG of SiGe layers but an effective method which completely eliminates this problem has not yet been presented (17).…”

Section: Introductionmentioning

confidence: 99%

Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique

Kolahdouz

¹

,

Maresca

²

,

Ghandi

³

et al. 2011

J. Electrochem. Soc.

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Recently, selective epitaxial growth (SEG) of B-doped SiGe layers has been used in recessed source/drain (S/D) of pMOSFETs. The uniaxial induced strain enhances the carrier mobility in the channel. In this work, a detailed model for SEG of SiGe has been developed to predict the growth rate and Ge content of layers in dichlorosilane(DCS)-based epitaxy using a reduced-pressure CVD reactor. The model considers each gas precursor contributions from the gas-phase and the surface. The gas flow and temperature distribution were simulated in the CVD reactor and the results were exerted as input parameters for Maxwell energy distribution. The diffusion of molecules from the gas boundaries was calculated by Fick's law and Langmuir isotherm theory (in non-equilibrium case) was applied to analyze the surface. The pattern dependency of the selective growth was also modeled through an interaction theory between different subdivisions of the chips. Overall, a good agreement between the kinetic model and the experimental data were obtained.

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“…‫ܧ‬ ா௧ = 1.5473݁ ିଵଶ.ହଷହ ಸಹ ర [15] Although an increase in the etch rate is observed in SiGe epitaxy, its growth rate is still higher compared to that of Si. The Ge content in SiGe layers is also an important factor which is obtained from the flux/partial pressure ratio between Ge and Si (21) as shown in the following equation:…”

Section: Ecs Transactions 33 (6) 581-593 (2010)mentioning

confidence: 99%

Kinetic Model of SiGe Selective Epitaxial Growth Using RPCVD Technique

Kolahdouz,

Maresca,

Ghandi

et al. 2010

Meet. Abstr.

0

View full text Add to dashboard Cite

Recently, selective epitaxial growth (SEG) of B-doped SiGe layers has been used in recessed source/drain (S/D) of pMOSFETs. The uniaxial induced strain enhances the carrier mobility in the channel. In this work, a detailed model for SEG of SiGe has been developed to predict the growth rate and Ge content of layers in dichlorosilane(DCS)-based epitaxy using a reduced-pressure CVD reactor. The model considers each gas precursor contributions from the gas-phase and the surface. The gas flow and temperature distribution were simulated in the CVD reactor and the results were exerted as input parameters for Maxwell energy distribution. The diffusion of molecules from the gas boundaries was calculated by Fick's law and Langmuir isotherm theory (in non-equilibrium case) was applied to analyze the surface. The pattern dependency of the selective growth was also modeled through an interaction theory between different subdivisions of the chips. Overall, a good agreement between the kinetic model and the experimental data were obtained.

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“…Selectively grown SiGe-based material has been used in CMOS structures as the channel layer or in source/drain junctions. The Ge amount and layer thickness in these layers are strongly dependent on the size of the oxide openings [9,10]. HRXRD can be easily applied on the test chip with a particular oxide opening size to measure the Ge amount.…”

Section: X-ray Analysis For In-line Process Monitoringmentioning

confidence: 99%

Application of high-resolution x-ray diffraction for detecting defects in SiGe(C) materials

Radamson

¹

,

Hållstedt

²

2005

J. Phys.: Condens. Matter

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The application of high-resolution x-ray diffraction for detecting and distinguishing defects in SiGe(C) layers is presented. A depth profile of the defects in SiGe/Si multilayers has been performed by using high-resolution reciprocal lattice mapping at different asymmetric reflections. Transmission electron microscopy was also applied in order to observe defects in the layers and these results were linked with the x-ray analysis. The substitutional C or B concentration in SiGe was measured by the shift of layer peak compared to the intrinsic layers. The thermal stability of the SiGe layers was investigated in order to rank the epitaxial quality of the SiGe below the detection limit of x-ray technique. It has also been demonstrated that x-ray analysis can be used for in-line process monitoring of layers grown in small device openings on patterned substrates. These types of analysis have also been used routinely for the evaluation of processed samples.

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Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers

Cited by 13 publications

References 12 publications

Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique

Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique

Kinetic Model of SiGe Selective Epitaxial Growth Using RPCVD Technique

Application of high-resolution x-ray diffraction for detecting defects in SiGe(C) materials

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