Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation

Sun, Yan; Wang, Yujia; Wang, Enze; Wang, Bolun; Zhao, Haijun; Zeng, Yongpan; Zhang, Qinghua; Wu, Yonghuang; Gu, Lin; Li, Xiaoyan; Liu, Kai

doi:10.1038/s41467-022-31685-7

Cited by 21 publications

(8 citation statements)

References 44 publications

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“…To date, transfer and folding are the commonly used methods for fabricating twisted bilayers. [123][124][125][126] However, all these strategies suffer from issues of low throughput, harsh controllability or unavoidable interlayer contamination. Directly growing twisted 2D materials with controllable angles and clean interfaces is desperately needed.…”

Section: Discussionmentioning

confidence: 99%

Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives

Zhao

Guo

et al. 2023

Chem. Soc. Rev.

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Section: Discussionmentioning

confidence: 99%

Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives

Zhao

Guo

et al. 2023

Chem. Soc. Rev.

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“…Similarly, the shearing boundary model was also applied to twisted bilayer MoS 2 in an AFM deflection study [313], as illustrated in figure 14(d). By incorporating the shear stress in the mechanics model (figure 14(e)), modifications to the nonlinear fitting bring better alignment between theoretical predictions and experimental data (figure 14(f)).…”

Section: Out-of-plane Loading With Shearing-boundary Modelmentioning

confidence: 99%

“…The inset shows a contour map of the nonlinear fitting error to obtain the closest shear stress of this sample. Reproduced from [313]. CC BY 4.0.…”

Section: Raman-tensile Test For Interfacial Characterizationmentioning

confidence: 99%

Recent advances in the mechanics of 2D materials

Wang

Hou

Yan

et al. 2023

Int. J. Extrem. Manuf.

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The exceptional physical properties and unique layered structure of two-dimensional (2D) materials has made this class of materials great s candidate for applications in electronics, energy conversion/storage devices, nanocomposites, and multifunctional coatings, among others. At the center of this application-space, mechanical properties play a vital role in materials design, manufacturing, integration and performance. The emergence of 2D materials has also sparked broad scientific inquiry, with new understanding of mechanical interactions between 2D structures and interfaces being of great interest to the community. Building on the dramatic expansion of research activity in recent years, here we provide a review of recent advances in the understanding of the elastic properties, in-plane failures, fatigue performance, interfacial shear/friction, and adhesion behavior of 2D materials. In this article, special emphasis is placed on some new 2D materials, novel characterization techniques and computational methods, as well as insights into deformation and failure mechanisms. A deep understanding of the intrinsic and extrinsic factors that govern 2D material mechanics is further provided, in the hopes that the community may draw design strategies for structural and interfacial engineering of 2D material systems. We end this review article with a discussion of our perspective on the state of the field and outlook on areas for future research directions.

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“…[ 2,10–12 ] Many efforts have been devoted to studying stacking‐order (or twist angle) dependent properties of bilayer materials in these years. [ 13–15 ] It is important to prepare bilayer materials with controllable stacking orders in a high throughput way.…”

Section: Introductionmentioning

confidence: 99%

Resolidified Chalcogen‐Assisted Growth of Bilayer Semiconductors with Controlled Stacking Orders

Wu,

He,

Wang

et al. 2023

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Bilayer semiconductors have attracted much attention due to their stacking‐order‐dependent properties. However, as both 3R‐ and 2H‐stacking are energetically stable at high temperatures, most of the high‐temperature grown bilayer materials have random 3R‐ or 2H‐stacking orders, leading to non‐uniformity in optical and electrical properties. Here, a chemical vapor deposition method is developed to grow bilayer semiconductors with controlled stacking order by modulating the resolidified chalcogen precursors supply kinetics. Taking tungsten disulfide (WS2) as an example, pure 3R‐stacking (100%) and 2H‐stacking dominated (87.6%) bilayer WS2 are grown by using this method and both show high structural and optical quality and good uniformity. Importantly, the bilayer 3R‐stacking WS2 shows higher field effect mobility than 2H‐stacking samples, due to the difference in stacking order‐dependent surface potentials. This method is universal for growing other bilayer semiconductors with controlled stacking orders including molybdenum disulfide and tungsten diselenide, paving the way to exploit stacking‐order‐dependent properties of these family of emerging bilayer materials.

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Determining the interlayer shearing in twisted bilayer MoS2 by nanoindentation

Cited by 21 publications

References 44 publications

Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives

Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives

Recent advances in the mechanics of 2D materials

Resolidified Chalcogen‐Assisted Growth of Bilayer Semiconductors with Controlled Stacking Orders

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