Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Hayashi, S.; Sandhu, Rajinder; Wójtowicz, M.; Sun, Y.; Hicks, Robert F.; Goorsky, Mark S.

doi:10.1088/0022-3727/38/10a/033

Cited by 16 publications

(16 citation statements)

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“…Finally, the transferred InP template is polished to reduce the surface roughness. The processing parameters that must be addressed include ͑i͒ properties of interfacial bonding layers, wafer bonding time and temperatures, 18 ͑ii͒ ion implantation conditions for exfoliating the template layer, 19 ͑iii͒ chemical mechanical polishing ͑CMP͒ of the exfoliated layer, 20 and ͑iv͒ post-bonding hightemperature annealing or epitaxial growth by both molecular beam epitaxy and organometallic vapor phase epitaxy. 21 The materials issues surrounding III-V integration by this means are illustrated most clearly by the exfoliation and layer transfer step as the bonding mechanisms have been discussed elsewhere.…”

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confidence: 99%

“…21 The materials issues surrounding III-V integration by this means are illustrated most clearly by the exfoliation and layer transfer step as the bonding mechanisms have been discussed elsewhere. 18 Our prior work focused on InP transferred layer structures, [19][20][21] but exfoliated layers of other materials have also been demonstrated. [22][23][24] The wide difference in materials properties among these examples ͑and complementary work on Si, 25 SiC, 26 and CdZnTe 27 ͒ demon-strate that an understanding of exfoliation processes leads to improved layer transfer schemes for a wide variety of semiconductor materials.…”

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confidence: 99%

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Materials Issues for the Heterogeneous Integration of III-V Compounds

Hayashi

Goorsky

Noori

et al. 2006

J. Electrochem. Soc.

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GaAs, InP, GaSb, and InAs were investigated for layer transfer to other III-V substrates using hydrogen ion exfoliation and wafer bonding to develop III-V based wafer bonded templates for subsequent epitaxial growth of device structures. High-resolution X-ray diffraction was proven to be particularly helpful in this investigation enabling nondestructive testing of the initial implantation profile as well as the strain relief ͑associated with the diffusion of hydrogen and other point defects͒ after various annealing sequences. The kinetics of exfoliation for many different III-V materials ͑including GaAs, InP, InAs, and GaSb͒ showed similar dependence on the processing temperature relative to the material melting temperature ͑and other materials parameters͒, i.e., lower melting temperature materials required lower temperature processing to retain the implanted hydrogen for exfoliation. In all of these cases, a multiple annealing sequence was shown to produce the most efficient exfoliation.

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confidence: 99%

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confidence: 99%

Materials Issues for the Heterogeneous Integration of III-V Compounds

Hayashi

Goorsky

Noori

et al. 2006

J. Electrochem. Soc.

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“…8b. Successful bonding of porous silicon surfaces via silicon nitride interlayers was achieved using the wafer bonding procedure demonstrated previously for other materials combinations, 30 establishing that separate surface preparation steps ͑chemical mechanical polishing, high temperature anneal for porous surface sintering, 4,5,31 etc.͒ that were used to bond porous layers are not necessary to achieve a bondable surface.…”

Section: Resultsmentioning

confidence: 79%

Low Temperature Processing of Porous Silicon Films for Wafer Bonding-Based Thin-Film Layer Transfer Applications

Joshi

Goorsky

2010

J. Electrochem. Soc.

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Porous silicon films were fabricated from p + -Si ͑0.001-0.005 ⍀ cm͒ wafers and characterized for their applicability to wafer bonding and layer transfer schemes. Conditions for producing porous silicon films compatible with both ͑i͒ wafer bonding surface smoothness requirements and ͑ii͒ layer transfer mechanical requirements were investigated. Nanoindentation of various films showed the quadratic dependence of Young's modulus on relative density. High porosity films ͑Ͼ90%͒ exhibited prohibitively high surface roughness values for wafer bonding applications, while wafers with lower porosity produced surfaces that were sufficiently smooth; films with midrange Young's modulus were selected for layer transfer applications. Demonstration of wafer bonding of porous silicon surfaces using silicon nitride interlayers was shown without the use of a high temperature anneal step to densify the porous surface or chemical mechanical polishing. Coarsening of the porous structure was observed at temperatures as low as 300°C, and the porous films remained pseudomorphic after annealing at all temperatures, as high as 900°C. Strong bonds were formed at the silicon nitride interfaces after low temperature annealing. After higher temperature annealing, mechanical fracture of the bonded stack occurred in the porous film parallel to the wafer bond interface. A fracture mechanism for these structures is proposed.Thin-film layer transfer represents a promising technique to increase versatility in the fabrication of complex semiconductor devices. Interest in layer transfer techniques to fabricate engineered substrates was largely sparked by the desire for silicon-on-insulator structures. One such technique, ELTRAN ͑Epitaxial Layer TRANsfer͒, 1-5 incorporated a silicon wafer that was electrochemically etched to produce a porous film at the surface; after annealing in a hydrogen atmosphere to sinter pores at the surface to produce a thin, fully dense surface layer, this film is subsequently used as a template for silicon homoepitaxy. This structure is then bonded via silicon dioxide interlayers to a silicon handle wafer, and transfer of the epitaxial Si layer is achieved by use of a high pressure water jet to fracture the stack at the weakest layer, namely the porous silicon. 1,5 The use of porous silicon as an imbedded mechanically weak layer leads to large area yield layer transfer; however, utilization of this and similar methods such as the porous Si process ͑PSI͒ 6 is limited to the transfer of silicon homoepitaxial or pseudomorphic layers.Using porous silicon/Si wafers in conjunction with wafer bonding and hydrogen exfoliation processes may bypass the limitation to homoepitaxial applications to create transfer-capable monolithic heterostructures. 7,8 A variety of composite semiconductor structures has been produced 9-19 using wafer bonding and hydrogen exfoliation techniques; this study focuses on demonstrating the compatibility of porous silicon films with these processes for use in layer transfer applications.Previous studies cond...

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“…We determined the thicknesses and film densities by profile fitting under the multilayer assumption. 24,25) The C-V characteristics were measured at a frequency of 1 MHz with a Pt=SiN=n-Si (metal=insulator=silicon) structure to evaluate the fixed charge density and the interface trap state density in the SiN films. 26)…”

Section: Methodsmentioning

confidence: 99%

X-ray evaluation of electronic and chemical properties and film structures in SiN passivation layer on crystalline Si solar cells

Yamashita¹,

Ikeno²,

Tachibana³

et al. 2015

Jpn. J. Appl. Phys.

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We investigated the electronic chemical properties and film structures in SiN passivation layers on crystalline Si by X-ray photoelectron spectroscopy (XPS) and X-ray reflectometry (XRR). From XPS analyses, a N-rich component (N-Si-N) and oxygen mixing were observed at the interface. The longest lifetime was obtained after post deposition annealing at 600 °C, where the N-rich layer was the thinnest with small peak height. Therefore, longer lifetime could be obtained as the N concentration at the interface decreased. The film consisted of three SiN layers and one SiO 2 layer, as confirmed by XRR profile fitting. From the density profiles, a longer lifetime was obtained when the density gradient in the oxygen mixing layer was small. Results of XPS and XRR suggested that N at the interface significantly affected the lifetime. We believe it is important to understand the electronic chemical properties at the passivation interface to realize high-efficiency Si solar cells.

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Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Cited by 16 publications

References 16 publications

Materials Issues for the Heterogeneous Integration of III-V Compounds

Materials Issues for the Heterogeneous Integration of III-V Compounds

Low Temperature Processing of Porous Silicon Films for Wafer Bonding-Based Thin-Film Layer Transfer Applications

X-ray evaluation of electronic and chemical properties and film structures in SiN passivation layer on crystalline Si solar cells

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