Materials Issues for the Heterogeneous Integration of III-V Compounds

Hayashi, S.; Goorsky, Mark S.; Noori, A.; Bruno, David A.

doi:10.1149/1.2353607

Cited by 41 publications

(46 citation statements)

References 30 publications

(38 reference statements)

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“…11,12 In addition, dependence between the lowest temperature required to trigger the nucleation process and the melting point of the implanted material has also been highlighted in previous work. 5 As the melting point of germanium ͑937°C͒ is close to the melting point of InP ͑1060°C͒, defect nucleation would be expected to occur at 150°C or below in hydrogen-implanted germanium. To study this effect, surface roughness measurements after long ͑22 h͒ anneal at 100, 130, or 150°C have been performed.…”

Section: A Low Temperature Hydrogen Diffusionmentioning

confidence: 99%

“…2,3 The mechanisms which govern defect formation in H-implanted semiconductors and the creation of microcracks has already been extensively characterized in silicon, germanium, 4 and III-V compounds. 5 It is often addressed from a wafer bonding perspective and targets a range of applications varying from the fabrication of low defective substrates for complementary metal-oxide-semiconductor compatible applications ͓͑SOI and germanium-on-insulator substrates "GeOI" ͑Ref. 6͔͒ to advanced photonic devices like avalanche photodiodes and solar cells.…”

Section: Introductionmentioning

confidence: 99%

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Low temperature exfoliation process in hydrogen-implanted germanium layers

Ferain

Byun

Colinge

et al. 2010

Journal of Applied Physics

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The feasibility of transferring hydrogen-implanted germanium to silicon with a reduced thermal budget is demonstrated. Germanium samples were implanted with a splitting dose of 5×1016 H2+ cm−2 at 180 keV and a two-step anneal was performed. Surface roughness and x-ray diffraction pattern measurements, combined with cross-sectional TEM analysis of hydrogen-implanted germanium samples were carried out in order to understand the exfoliation mechanism as a function of the thermal budget. It is shown that the first anneal performed at low temperature (≤150 °C for 22 h) enhances the nucleation of hydrogen platelets significantly. The second anneal is performed at 300 °C for 5 min and is shown to complete the exfoliation process by triggering the formation of extended platelets. Two key results are highlighted: (i) in a reduced thermal budget approach, the transfer of hydrogen-implanted germanium is found to follow a mechanism similar to the transfer of hydrogen-implanted InP and GaAs, (ii) such a low thermal budget (<300 °C) is found to be suitable for directly bonded heterogeneous substrates, such as germanium bonded to silicon, where different thermal expansion coefficients are involved.

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Section: A Low Temperature Hydrogen Diffusionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low temperature exfoliation process in hydrogen-implanted germanium layers

Ferain

Byun

Colinge

et al. 2010

Journal of Applied Physics

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“…73 The implantation was performed with 150-keV H 2 + ions at a dose of 2 9 10 16 H 2 + cm -2 while cooling the substrates to a nominal value of À20°C, which is necessary to retain sufficient hydrogen for exfoliation, i.e., to avoid substantial dynamic annealing. After implantation of InAs substrates, they were bonded to SiN x -coated GaAs wafers.…”

Section: Other Semiconductorsmentioning

confidence: 99%

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

Singh

Christiansen

Moutanabbir

et al. 2010

Journal of Elec Materi

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Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many parameters such as the semiconductor material, ion fluence, ion energy, and implantation temperature. The optimum values of these parameters for compound semiconductors are presented. The blistering and splitting processes in silicon have been studied in detail, motivated by the fabrication of the widely used silicon-on-insulator wafers. Hence, a comparison of the blistering process in Si and compound semiconductors is also presented. This comparative study is technologically relevant since ion implantation-induced layer splitting combined with direct wafer bonding in principle allows the transfer of any type of semiconductor layer onto any foreign substrate of choice-the technique is known as the ion-cut or Smart-Cut (TM) method. For the aforementioned compound semiconductors, investigations regarding layer transfer using the ion-cut method are still in their infancy. We report feasibility studies of layer transfer by the ion-cut method for some of the most important and widely used compound semiconductors. The importance of characteristic values for successful wafer bonding such as wafer bow and surface flatness as well as roughness are discussed, and difficulties in achieving some of these values are pointed out

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“…8-10 A few works have also reported on this phenomenon in some conventional compound semiconductors. [11][12][13] Techniques such as vibrational spectroscopies, [14][15][16][17][18][19] transmission electron microscopy, 10,20 Rutherford backscattering spectrometry in the channeling mode, [21][22][23] x-ray diffraction, 24 and positron annihilation spectroscopy 22,25 improved greatly our understanding of the microscopic mechanisms of the ion-cut process ͑particularly in Si͒. These studies have demonstrated the critical role of H-vacancy ͑H-V͒ complexes and damage-generated stress in the formation of nanoscopic platelets and voids immediately after implantation.…”

Section: Introductionmentioning

confidence: 99%

Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN

et al. 2010

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We present a detailed study of the thermal evolution of H ion-induced vacancy related complexes and voids in bulk GaN implanted under ion-cut conditions. By using transmission electron microscopy, we found that the damage band in as-implanted GaN is decorated with a high density of nanobubbles of ϳ1 -2 nm in diameter. Variable energy Doppler broadening spectroscopy showed that this band contains vacancy clusters and voids. In addition to vacancy clusters, the presence of V Ga , V Ga -H 2 , and V Ga V N complexes was evidenced by pulsed low-energy positron lifetime spectroscopy. Subtle changes upon annealing in these vacancy complexes were also investigated. As a general trend, a growth in open-volume defects is detected in parallel to an increase in both size and density of nanobubbles. The observed vacancy complexes appear to be stable during annealing. However, for temperatures above 450°C, unusually large lifetimes were measured. These lifetimes are attributed to the formation of positronium in GaN. Since the formation of positronium is not possible in a dense semiconductor, our finding demonstrates the presence of sufficiently large open-volume defects in this temperature range. Based on the Tao-Eldrup model, the average lattice opening during thermal annealing was quantified. We found that a void diameter of 0.4 nm is induced by annealing at 600°C. The role of these complexes in the subsurface microcracking is discussed.

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Materials Issues for the Heterogeneous Integration of III-V Compounds

Cited by 41 publications

References 30 publications

Low temperature exfoliation process in hydrogen-implanted germanium layers

Low temperature exfoliation process in hydrogen-implanted germanium layers

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN

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