Determination of ultra trace contaminants on silicon wafer surfaces using total-reflection X-ray fluorescence TXRF ‘state-of-the-art’

Pahlke, S.; Fabry, L.; Kotz, L.; Mantler, Claus; Ehmann, T.

doi:10.1016/s0584-8547(01)00312-3

Cited by 67 publications

(43 citation statements)

References 47 publications

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“…When higher sensitivity is requested, monitoring is typically carried out by VPD of the native oxide layer and analysis by means of laboratory based TXRF and/or inductively coupled plasma mass spectrometry (ICP-MS) at the expense of the loss of the information relative to the location and the distribution of the contamination on the wafer [12,[53][54][55][56]. To trace the source of the contamination, not only the distribution of the contamination is very valuable but also additional information on the chemical state of the element can be helpful.…”

Section: Sr-txrf Analyses Of Metallic Contamination On Silicon Wafersmentioning

confidence: 99%

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Meirer

Singh

Pianetta

et al. 2010

TrAC Trends in Analytical Chemistry

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Synchrotron radiation-induced total reflection X-ray fluorescence (SR-TXRF) analysis is a high sensitive analytical technique that offers limits of detection in the femtogram range for most elements. Besides the analytical aspect, SR-TXRF is mainly used in combination with angle-dependent measurements and/or X-ray absorption near-edge structure (XANES) spectroscopy to gain additional information about the investigated sample. In this article, we briefly discuss the fundamentals of SR-TXRF and follow with several examples of recent research applying the above-mentioned combination of techniques to analytical problems arising from industrial applications and environmental research. ª

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Section: Sr-txrf Analyses Of Metallic Contamination On Silicon Wafersmentioning

confidence: 99%

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Meirer

Singh

Pianetta

et al. 2010

TrAC Trends in Analytical Chemistry

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“…www.interscience.wiley.com/journal/sia 3 ] were used for a linear combination fit using all possible combinations (4) of these standards. The results and fit parameters of the best fit (best R-factor) are reported in Table 2.…”

Section: Resultsmentioning

confidence: 99%

Feasibility study of SR‐TXRF‐XANES analysis for iron contaminations on a silicon wafer surface

Meirer

Streli

Pepponi

et al. 2008

Surface & Interface Analysis

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The ability to chemically characterize the contamination on silicon wafers is of critical importance to the semiconductor industry. It provides information on possible unwanted chemical processes taking place on the wafer surface and helps in determining the true source of the contamination problem. This type of information is not readily accessible with standard laboratory equipment. Synchrotron radiation-induced total reflection X-ray fluorescence (SR-TXRF) was combined with X-ray absorption near-edge structure (XANES) to determine the chemical state of Fe contaminations on a silicon wafer surface. Main purpose of the study was to test the method for a contamination issue as it could appear in a microelectronic VLSI production fab.

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“…Another common application is the control of surfaces' contamination [29]. The detection limits are of the order of picograms or even femtograms if pre-concentration methods are applied [11].…”

Section: Total Reflection X-ray Fluorescencementioning

confidence: 99%

Grazing angle X-ray fluorescence from periodic structures on silicon and silica surfaces

Nowak

Banaś

Błchucki

et al. 2014

Spectrochimica Acta Part B: Atomic Spectroscopy

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Various 3-dimensional nano-scaled periodic structures with different configurations and periods deposited on the surface of silicon and silica substrates were investigated by means of the grazing incidence and grazing emission X-ray fluorescence techniques. Apart from the characteristics which are typical for particle-and layer-like samples, the measured angular intensity profiles show additional periodicity-related features. The latter could be explained by a novel theoretical approach based on simple geometrical optics (GO) considerations. The new GO-based calculations were found to yield results in good agreement with experiment, also in cases where other theoretical approaches are not valid, e.g., periodic particle distributions with an increased surface coverage.

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Determination of ultra trace contaminants on silicon wafer surfaces using total-reflection X-ray fluorescence TXRF ‘state-of-the-art’

Cited by 67 publications

References 47 publications

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Synchrotron radiation-induced total reflection X-ray fluorescence analysis

Feasibility study of SR‐TXRF‐XANES analysis for iron contaminations on a silicon wafer surface

Grazing angle X-ray fluorescence from periodic structures on silicon and silica surfaces

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