Determination of trap depth and trap density in Se70Te30−xZnx thin films using thermally stimulated current measurements

Yadav, S.; Pal, R.; Sharma, Suresh Kumar; Kumar, Anjani

doi:10.1016/j.physb.2009.04.015

Cited by 15 publications

(5 citation statements)

References 19 publications

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“…From this graph it is clear that the TSC peaks shifts to the higher temperatures as the heating rate increases. Shift of this peak with heating rate confirms the observation of TSC [36,37] as also observed by various other workers [15,16,43,44] in chalcogenide glasses. Such peaks may not be related to the relaxation effects at glass transition temperature (T g ) as they are far away from T g reported in these glasses [45].…”

Section: Resultssupporting

confidence: 91%

A Quantitative Approach for the Determination of Light Induced Defects in a-Se₉₀Sb_10-xAg_xThin Films by Using Thermally Stimulated Current Technique

Tripathi

Kumar

2016

Acta Phys. Pol. A

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Thin films of Se90Sb10−xAgx (x = 0, 2, 4, 6, 8) glasses have been prepared by vacuum evaporation technique. Present study reports the quantitative estimation of light induced defects in aforesaid thin films by using thermally stimulated current technique. Measurements have been made in a vacuum ≈ 10 −3 Torr before and after exposing amorphous films to white light for different exposure times (0 to 6 h). Results indicate that light induced defects are created due to prolonged exposure of light and this is explained by a microscopic model proposed by Shimakawa and co-workers. It is also found that fractional increase in light induced defect density decreases as Ag concentration increases. A discontinuity has, however, been observed at 4 at.% of Ag which is explained in terms of average coordination number.

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Section: Resultssupporting

confidence: 91%

A Quantitative Approach for the Determination of Light Induced Defects in a-Se₉₀Sb_10-xAg_xThin Films by Using Thermally Stimulated Current Technique

Tripathi

Kumar

2016

Acta Phys. Pol. A

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“…Our studies show this feature for Cu 3 BiS 3 , which is prevalent in a typical spectrum of I TSC . Previous studies have reported such behavior in InSSe [15], ZnO [10,16], and Se 70 Te 30-x Zn x [17] samples. These variations in the I TSC curve are associated to excitation processes during illumination of charge carriers to the material, allowing the transition to states above the valence band, filling the trap states present in the material gap.…”

Section: Resultsmentioning

confidence: 73%

“…TSC is a well-known, non-isothermal technique to investigate the trap levels in semiconducting materials [9][10][11]. Depending on the suitability of the model chosen, TSC analysis allows estimating the trap density and the trap depth, along with other parameters.…”

Section: Introductionmentioning

confidence: 99%

Thermally stimulated conductivity of Cu3BiS3 thin films deposited by co-evaporation: determination of trap parameters related to defects in the gap

2012

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Cu 3 BiS 3 thin films were produced by evaporating precursor Cu and Bi species in sulfur atmosphere through a two-stage process. Thermally stimulated current (TSC) measurements were carried out on as-grown Cu 3 BiS 3 crystals in the temperature range of 150-400 K. The measurements were performed while increasing temperature at a rate of 5 K/min. Analysis of thermal power measurements at room temperature enabled the type of conductivity of the material, respectively. The spectra obtained from the TSC showed the presence of trapping centers associated with the peaks in the current curves as a function of temperature. Transport mechanisms as hopping and thermally active carriers were identified for low-and high-temperature regions, respectively. Three trapping levels around 1.04 eV were detected from the TSC spectra. These levels in Cu 3 BiS 3 crystals may be associated to the presence of structural defects and unintentional impurities during preparation processes. The trap parameters were determined by various analysis methods, and they agree well with each other. A correlation between electrical properties and defects in the material were also studied.

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“…The metal-containing nanocrystalline materials are well-known promising materials owing to their some unusual properties, including anomalous order of band gaps, high carrier mobility, exclusive chemical durability, high dielectric constant, extended infrared (IR) transparency, high reflection index, low phonon energy, high photo sensitivity, high thermal stability, and special nonlinear optical properties [2,[7][8][9]. These fascinating and incomparable properties of lead nanostructured semiconductors have inculcated great interest in the fundamental studies of these materials.…”

Section: Introductionmentioning

confidence: 99%

On the structural and thermophysical study of Pb-doped Se-Te-In nanochalcogenide alloys

Anjali

Patial

Thakur

2020

Journal of Asian Ceramic Societies

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Pb additive nanochalcogenide materials are becoming well-known materials in modern optoelectronics. In this paper, multicomponent Se-Te-In-Pb nanochalcogenide alloys are prepared using melt-quenching technique. The physical and submicron structural features of investigated system are reported and discussed. Characteristic peaks in x-ray spectra signify nanorange of each sample under investigation validated by FESEM and HRTEM. Influence of Pb content on examined composition has been deliberated with respect to their physical characterization namely average coordination number (), mean bond energy (), crosslinking density (X), lone-pair electrons (L), fraction of floppy modes (f), constraints (N c ), electronegativity (χ), cohesive energy (CE), glass transition temperature (T g ), and heat of atomization (H s ). It is realized that addition of Pb content, enhanced N c , X, and . Whereas, , L, f, χ, CE, T g , and H s decrease with Pb addition. Cohesive energy is analyzed through chemical-bond approach. T g is estimated by Tichy-Ticha and Lankhorst approaches and are found in consistent with experimental results. The band gap of investigated system has been calculated theoretically by Shimakawa's relation and deduced results are analyzed through cohesive energy, electronegativity, and average single-bond energy. Also the compositional dependence of experimentally derived optical band gap has been analyzed and discussed.

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Determination of trap depth and trap density in Se70Te30−xZnx thin films using thermally stimulated current measurements

Cited by 15 publications

References 19 publications

A Quantitative Approach for the Determination of Light Induced Defects in a-Se₉₀Sb_10-xAg_xThin Films by Using Thermally Stimulated Current Technique

A Quantitative Approach for the Determination of Light Induced Defects in a-Se₉₀Sb_10-xAg_xThin Films by Using Thermally Stimulated Current Technique

Thermally stimulated conductivity of Cu3BiS3 thin films deposited by co-evaporation: determination of trap parameters related to defects in the gap

On the structural and thermophysical study of Pb-doped Se-Te-In nanochalcogenide alloys

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Determination of trap depth and trap density in Se70Te30−xZnx thin films using thermally stimulated current measurements

Cited by 15 publications

References 19 publications

A Quantitative Approach for the Determination of Light Induced Defects in a-Se90Sb10-xAgxThin Films by Using Thermally Stimulated Current Technique

A Quantitative Approach for the Determination of Light Induced Defects in a-Se90Sb10-xAgxThin Films by Using Thermally Stimulated Current Technique

Thermally stimulated conductivity of Cu3BiS3 thin films deposited by co-evaporation: determination of trap parameters related to defects in the gap

On the structural and thermophysical study of Pb-doped Se-Te-In nanochalcogenide alloys

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A Quantitative Approach for the Determination of Light Induced Defects in a-Se₉₀Sb_10-xAg_xThin Films by Using Thermally Stimulated Current Technique

A Quantitative Approach for the Determination of Light Induced Defects in a-Se₉₀Sb_10-xAg_xThin Films by Using Thermally Stimulated Current Technique