Determination of the Pulsed Electron Beam Spectrum by Current and Voltage Oscillograms

Abstract

The algorithm and results of calculating the integral and differential energy spectra of a pulsed electron beam (350–500 keV, 80 ns), generated by direct-action accelerators, are presented. The electron spectrum was calculated using the oscillograms of the accelerating voltage, electron current, total current of the diode, and the one-dimensional Child–Langmuir (1D CL) ratio. It was found that the discrepancy in the integrated electron beam energy spectrum, when measured using the total current in the diode and using the electron beam current, did not exceed 15% for 80%–95% of the electrons generated in a diode with graphite, carbon fabric, and multipoint cathodes. When calculating the electron spectrum using the 1D CL, the error was much higher.

Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology

“…According to the simulation results in Fig. 3 , the e-beam is expected to penetrate and travel through a distance of a few microns, and the electron velocity before injection can reach to 6 cm/ns at energy of 10 keV [ 25 ], the response time is estimated to be within μsec level [ 26 ], enabling responses to fast scanning e-beams.…”

Melting Thresholds of Materials Irradiated with a Wide Class of Pulsed Electron Beams

“…It is an integral part of the 'UNIKUUM' complex of unique electrophysical equipment in Russia [33] (https://ckp-rf.ru/catalog/usu/43 4216/, accessed on 3 August 2023). The 'TEU-500' PEB source, developed at Tomsk Polytechnic University [34][35][36], the 'DUET' one, developed by the Institute of High-Current Electronics [37][38][39], and the 'SINUS-7' machine [40][41][42][43] are also of great interest for several scientific and technological applications.…”