Determination of the oxygen content in amorphous SiOx thin films

Zamchiy, A. O.; Баранов, Е. А.; Merkulova, I. E.; Khmel, S. Ya.; Максимовский, Е. А.

doi:10.1016/j.jnoncrysol.2019.05.015

Cited by 24 publications

(9 citation statements)

References 50 publications

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“…As a grown SiO x material, it contained characteristic Si-O and Si-H bonds exhibited by absorption spectra α ( ω ). The density of H-bonds in the SiOx microstructure can be determined by using the Si-H wagging vibrational mode centered at 640 cm −1 [ 4 ].…”

Section: Introductionmentioning

confidence: 99%

MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors

Conde

López

Simón

et al. 2022

Sensors

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MIS-type structures composed of silicon-rich oxide (SRO), thin films deposited by hot filament chemical vapor deposition (HFCVD), show interesting I-V and I-t properties under white light illumination and a response as photodetectors. From electrical measurements, it was found that at a reverse bias of −4 V, the illumination current increased by up to three orders of magnitude relative to the dark current, which was about 82 nA, while the photogenerated current reached a value of 25 μA. The reported MIS structure with SRO as the dielectric layer exhibited a hopping conduction mechanism, and an ohmic conduction mechanism was found with low voltage. I-t measurements confirmed the increased photogenerated current. Furthermore, the MIS structure, characterized by current-wavelength (I-λ) measurements, exhibited a maximum responsivity value at 254 mA/W, specific detectivity (D*) at 2.21 × 1011 cm Hz1/2 W−1, and a noise equivalent power (NEP) of 49 pW at a wavelength of 535 nm. The structure exhibited good switching behavior, with rise and fall times between 120 and 150 ms, respectively. These rise and decay times explain the generation and recombination of charge carriers and the trapping and release of traps, respectively. These results make MIS-type structures useful as photodetectors in the 420 to 590 nm range.

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Section: Introductionmentioning

confidence: 99%

MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors

Conde

López

Simón

et al. 2022

Sensors

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“…The bonds and composition of SRO films are explained following different models; according to the random bonding model (RBM), Si and O atoms are randomly mixed in the material, and a SiO x film is composed of five basic units, silicon tetrahedrons, Si-(Si 4- n O n ), n = 0, 1, 2, 3, 4, having a statistical distribution, while the mixture model (MM) suggests the existence of only Si–Si 4 and Si–O 4 units, neglecting the intermediate oxidation states of silicon. Finally, the interface clusters mixture model (IM) assumes the presence of both Si and SiO 2 clusters embedded in a SiO x matrix, and this is the adequate model [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Blue Electroluminescence in SRO-HFCVD Films

et al. 2021

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In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.

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“…Далее на образцы методом газофазного плазмохимического осаждения были нанесены тонкие пленки a-SiO x толщиной 150 nm. Стехиометрический коэффициент x для пленок a-SiO x был определен исходя из спектров пропускания инфракрасного диапазона [9] и составил 0.2. Полученные образцы отжигались в печи при температурах 285, 335 и 370 • C в течение 10 h в высоком (∼ 10 −5 Pa) вакууме.…”

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Золото-Индуцированная Кристаллизация Тонких Пленок Аморфного Субоксида Кремния

Лунев¹,

Замчий²,

Баранов³

et al. 2021

Письма В Журнал Технической Физики

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For the first time, polycrystalline silicon (poly-Si) was obtained as a result of the gold-induced crystallization of amorphous silicon suboxide (a-SiOx). It is shown that, during annealing of a sample with a “substrate/gold thin film/a-SiO0.2 thin film” structure at 335 ℃, poly-Si is formed in a bottom layer (on the substrate), while gold diffuses into the upper layer. With an increase in the temperature to 370 ℃, the mechanism of poly-Si formation remains unchanged, however, only the rate of the crystallization process increases. Apparently, the process of poly-Si formation proceeds through the formation of gold silicides, which almost completely decompose into crystalline phases of gold and silicon at 370 ℃ for 10 h.

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Determination of the oxygen content in amorphous SiOx thin films

Cited by 24 publications

References 50 publications

MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors

MIS-Like Structures with Silicon-Rich Oxide Films Obtained by HFCVD: Their Response as Photodetectors

Blue Electroluminescence in SRO-HFCVD Films

Золото-Индуцированная Кристаллизация Тонких Пленок Аморфного Субоксида Кремния

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