Determination of the mean energy of backscattered electrons in dependence on the exit angle

Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

“…However, this formula is not insufficient agreement with the experimental results (see, e.g., [4,6]), since it disregards the fact that, first, η Si and E th are not con stants and depend on E 0 ; second, the total electron energy is partially absorbed and reflected in the "dead" layer of the detector. As a result, the calculated values of I β appear overestimated in the low energy region of E 0 and underestimated in the high energy region (see Fig.…”

“…The results of calculations of the signal I s as a func tion of E 0 by formula (6) for Au and Si targets at I 0 = 1 nA and α = 0 are shown in Fig. 1 together with experimental results.…”