Determination of the Fowler–Nordheim tunneling parameters from the Fowler–Nordheim plot

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

“…25 Figure 3 26 This barrier height of the reference SiO 2 /4H-SiC MOS sample is reasonably close to the previously reported values for dry SiO 2 determined by F-N tunneling mechanism. 26 The highest barrier height in literature for amorphous ALD grown Al 2 O 3 /4H-SiC, determined by F-N tunneling mechanism, is 1.58 eV as compared to 1.15 eV in our hot-plate.…”

Tunneling in sub-5nm La2O3 films deposited by E-beam evaporation

“…This is in total agreement with the results reported in Refs. [14,15] for SiO 2 . A major difficulty arises in the determination of DV, which, because of the current crowding effect at the entrance of the spot, may be different from that corresponding to the thermal equilibrium situation.…”

“…From experiments, we have found that the flatband voltage is in the range from À0.8 to À0.5 V depending on the sample. However, it has been shown that samples with different conduction characteristics may exhibit identical C-Vs [14,15] and therefore the information that can be extracted from this measurement is not a reliable indicator of the local injection conditions. We have found that for DV < À0.3 V, and after linearizing the plot, the slope of the FN plot (B) yields unphysical values for the barrier parameters.…”

A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator

“…The parameter E ox is the external electric field (also known as the oxide electric field or the cathode field); m e is the electron mass; m à is the effective mass of the electron; q is the electron charge; h is the Planck's constant; and U b is the Schottky barrier height [11]. Assuming that the substrate-gate work function difference can be neglected, as well as the surface potential in the substrate [12], the oxide electric field (E ox ) is simply given by V/t ox , where t ox is the oxide thickness (4  10 À7 cm).…”