Determination of the electronic properties of Cu2ZnSnSe4-based solar cells by impedance spectroscopy and current–voltage characteristics analysis

Bodeux, Romain; Rousset, Jean; Tsin, Fabien; Mollica, Fabien; Leite, Enrique; Delbos, Sébastien

doi:10.1007/s00339-017-1437-9

Cited by 13 publications

(13 citation statements)

References 42 publications

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“…It can be found that all the electrical parameters of the solar cells deposited on FTO are lower than the ones deposited on Mo. For CZTSe absorbers deposited on Mo, the best solar cells have led to efficiencies up to 8.0 % [21,22]. The best efficiency of solar cells on FTO back contact is about 2.3%.…”

Section: IIImentioning

confidence: 94%

“…In this work, we compared the growth of Cu 2 ZnSnSe 4 (CZTSe) deposited on two different glass coated TCOs : AZO (ZnO:Al) and FTO. The results are compared to cells with classical Mo back contact [21,22]. The effect of substrate combined with the deposition temperature of the absorber on morphology, composition, crystallinity of CZTSe and the optoelectronic properties of the solar cells will be discussed.…”

Section: Introductionmentioning

confidence: 99%

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Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Temgoua¹,

Bodeux

Mollica³

et al. 2019

Solar Energy

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Cu 2 ZnSnSe 4 (CZTSe) thin films have been synthetized by cosputtering followed by a selenization treatment on Mo and transparent conductive oxide (TCO) coated soda lime glass substrates, such as ZnO:Al and SnO 2 :F (FTO). The aims of the present work is to investigate the impact of the TCO substrates on the CZTSe growth, the reactions at the back contact and the electrical properties of solar cells. The results show that the morphology of CZTSe is affected by the TCO back contacts. It is found that TCO acts as a diffusion barrier of Na from soda lime glass to CZTSe. Thus low incorporation of Na during the annealing could explain the difference in grain size of CZTSe deposited on TCO. Moreover it is evidenced chemical reactions between TCO and CZTSe which affects the interface. While the efficiency up to 8 % is obtained for CZTSe based solar cells deposited on Mo substrate, the efficiency drops to 2.3 % for the solar cells deposited on FTO. The low efficiency is explained by the recombination at the back contact due to the formation of a very thin layer of ZnO at the CZTSe/FTO interface.

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Section: IIImentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Temgoua¹,

Bodeux

Mollica³

et al. 2019

Solar Energy

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“…This has been explained with a large series resistance in kesterites at low temperatures arising from either too deep acceptors [53] or a barrier at the back contact [54]. A high series resistance alone, even if temperature independent, could lead to a capacitance step due to circuit response if an inadequate equivalent circuit model is used [55], emphasizing the need to use appropriate models to analyze admittance measurements [5,56,57]. In the literature no complete agreement on this phenomenon is found, e.g.…”

Section: Intrinsic Defects In Kesteritesmentioning

confidence: 99%

The electrical and optical properties of kesterites

et al. 2019

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Kesterite Cu 2 ZnSn(S x Se 1-x ) 4 (CZTSSe) semiconductor materials have been extensively studied over the past decade, however despite significant efforts, the open circuit voltage remains below 60% of the theoretical maximum. Understanding the optical and electrical properties is critical to explaining and solving the voltage deficit. This review aims to summarize the present knowledge of optical and electrical properties of kesterites and specifically focuses on experimental data of intrinsic defects, charge carrier density and transport, and minority carrier lifetime and related rate-limiting recombination mechanisms. It concludes with suggestions for further investigation of the electrical and optical properties of kesterite materials. of the (001) cationic planes are randomly occupied by Cu and Zn atoms [6,7]. While theoretical calculations by Chen et al [8] find the lowest formation energy for the kesterite crystal structure, cation disorder is present in CZTSSe due to the low energy difference between the stannite-and kesterite-related structures. It has been suggested that the Cu-Zn disorder in Cu 2 ZnSnS 4 (CZTS) follows a second order phase transition with a critical temperature of ∼260°C for CZTS, which was first observed and introduced to describe the modifications in the Raman spectra of CZTS annealed at different temperatures [9]. A similar phenomenon has also been found in Cu 2 ZnSnSe 4 (CZTSe), with a critical temperature of 200°C [10], where the measured increase in band gap is explained by thermally induced ordering of Cu and Zn cations. While the remarkable effect of the orderdisorder transition on the band gap and vibrational spectra is explained by Vineyard's theory [11], the disorder parameter itself is not experimentally determined in the probed samples. A recent direct comparison between resonant x-ray diffraction and photoluminescence (PL) data in CZTSe has confirmed a relationship between the Cu-Zn disorder and the band gap modification [12]. A change in the order parameter from 0 to 0.7 leads to a OPEN ACCESS RECEIVED significant increase in the band gap on the order of ∼0.11 eV and ∼0.20 eV for CZTSe and CZTS, respectively [10,13].The absorption coefficient for CZTS and CZTSe is about ∼2-3 × 10 4 cm −1 at 1.6 eV and at 1.1 eV, respectively, as determined by the normal reflectance and transmittance [2, 13] spectroscopic ellipsometry (SE) [14-16] and external quantum efficiency [17] methods. In the recent review by Choi et al [18] the main theoretical and experimental results on the energy band structure and SE data were discussed and summarized. Recently, Zamulko et al [19] re-examined first principle theory at different levels in order to improve the description of the electronic structure and optical properties of CZTSSe. Nishiwaki et al [20] performed density functional calculation to study absorption band tail of the kesterites. In particular, a theoretical estimate for the tail energy of ∼30 meV for both CZTS and CZTSe was obtained. It was suggested that quite large Urbach energi...

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“…The MoSe 2 interfacial layers with the thicknesses similar to ours and thicker than ours were previously reported by some researchers for the CZTSe based films grown by sputtering method in the literature. In these studies, the thicknesses of the MoSe 2 interfacial layers changed in the range of 200 to 1800 nm at different selenization temperatures 60‐62 . Further investigations are needed to clarify the effects of selenization parameters such as Se quantity, selenization temperature, pressure, and time on the formation of MoSe 2 interfacial layers, 63 but we did not make these investigations in this work.…”

Section: Resultsmentioning

confidence: 93%

“…In these studies, the thicknesses of the MoSe 2 interfacial layers changed in the range of 200 to 1800 nm at different selenization temperatures. [60][61][62] Further investigations are needed to clarify the effects of selenization parameters such as Se quantity, selenization temperature, pressure, and time on the formation of MoSe 2 interfacial layers, 63 but we did not make these investigations in this work. Here, in the case of sample A2, we believe that the ZnS layer over the Mo film which has a high melting point acts as a barrier layer for the diffusion of Se through the absorber layer into the Mo film and the formation rate of MoSe 2 interfacial layer might be suppressed thanks to the ZnS layer.…”

Section: Resultsmentioning

confidence: 97%

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

et al. 2020

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Summary Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films were grown on soda lime glass and Mo‐coated soda lime glass substrates by deposition of the precursor films via RF magnetron sputtering method in the stacking orders of Cu/Sn/Zn/Mo/SLG and Cu/Sn/ZnS/Mo/SLG using metallic Zn or binary sulfide ZnS targets and subsequently carrying out of selenization process. It was aimed to find out the effect of Zn or ZnS target types and the small amount of S originated from ZnS target material used in the deposition of precursor films on the structural, morphological, optical, and electrical characteristics of the films to be selenized. XRD and Raman spectroscopy analysis showed that the kesterite CZTSe structure was predominantly formed in both cases where Zn and ZnS targets were used. According to the EDX analysis, S content in the prepared film using ZnS target was only around 1.79 at%. This indicated that a considerable amount of S in the film was driven out during the selenization process. Scanning electron microscopy analysis revealed that ZnS target material contributed to the achievement of the absorber films with larger grain size. It was also determined that the thickness of the interfacial MoSe2 film between the absorber and Mo films decreased by using ZnS target in the precursor film. This was attributed to ZnS layer with a high melting point acting as a barrier layer over Mo film and retarding the diffusion of Se into the Mo film during the selenization process. In addition, the band gap energy values of the Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 films were found to be 1.18 and 1.28 eV, respectively.

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Determination of the electronic properties of Cu2ZnSnSe4-based solar cells by impedance spectroscopy and current–voltage characteristics analysis

Cited by 13 publications

References 42 publications

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

The electrical and optical properties of kesterites

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

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Determination of the electronic properties of Cu2ZnSnSe4-based solar cells by impedance spectroscopy and current–voltage characteristics analysis

Cited by 13 publications

References 42 publications

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

Comparative study of Cu2ZnSnSe4 solar cells growth on transparent conductive oxides and molybdenum substrates

The electrical and optical properties of kesterites

Investigation on the properties of Cu 2 ZnSnSe 4 and Cu 2 ZnSn(S,Se) 4 absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

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Product

Resources

About

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks