Determination of the diffusion coefficient of foreign atoms in metals via surface segregation

Hofmann, S.; Erlewein, J.

doi:10.1016/0036-9748(76)90311-2

Cited by 80 publications

(12 citation statements)

References 12 publications

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“…6,7 There are, however, two shortcomings with this equation. 8 The interaction energy between the atoms is not taken into account and the solute surface concentration build-up could increase infinitely with increasing time.…”

Section: Theorymentioning

confidence: 94%

An AES study of Sn surface segregation in Cu single crystals

Asante

Terblans

Roos

2005

Surface & Interface Analysis

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Quantitative treatment of Sn segregation data in the three low-index planes of Cu(111), Cu(110) and Cu(100) was carried out. Auger electron spectroscopy (AES) was used to acquire the data by heating the sample linearly with time (positive linear temperature ramp, PLTR) from 450 to 900 K and immediately cooling it linearly with time (negative linear temperature ramp, NLTR) from 900 to 650 K. The experimental data were fitted using the Darken model for the PLTR profiles. Two supportive models -Fick's integral and the Bragg-Williams equations -were used to extract the starting segregation parameters for the Darken model. Fick's integral was used to fit part of the data for the PLTR profile and the Bragg-Williams equations were used for the NLTR profile, which accounts for an extended equilibrium segregation region.The Sn segregation parameters, namely the interaction energy Z Cu -Sn , the diffusion coefficient D and the segregation energy 1G, were found as:

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Section: Theorymentioning

confidence: 94%

An AES study of Sn surface segregation in Cu single crystals

Asante

Terblans

Roos

2005

Surface & Interface Analysis

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“…In general, the approach to equilibrium after the McLean model (Eq. (13)) is too slow because of the oversimplified assumption ot = Xb(~X~)/X c = const, which impedes experimental fits of measured surface segregation data [90,91]. The reason is that the thermodynamically correct enrichment factor fl, as given by Eq.…”

Section: Mclean's Approachmentioning

confidence: 97%

“…In order to explain their results of surface segregation of Sn on Cu, Hofmann and Erlewein [90,93] used an atomic jump model taking into account the segregation free energy AG s, which considerably reduces the atomic jump probability from the segregation layer back to the bulk and therefore works in favor of nonrestricted out-diffusion from a semi-infinite bulk. For sufficiently high AG s, the solution is given by Figure 11 shows the calculated time development for Xb(t) and the adjacent bulk concentration which perfectly fitted the data for Sn on Cu [90,93].…”

Section: Ideal Sink Approachmentioning

confidence: 99%

Solute segregation at grain boundaries

Hofmann¹,

Leiĉek

1996

Interface Sci

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This feature article summarizes the present art and science of grain boundary segregation from the viewpoint of the authors activities in this field. In the part on equilibrium segregation, fundamental effects on grain boundary segregation are discussed such as the nature of the solute/matrix binary system, presence of additional elements, temperature, grain boundary orientation and type of interface. In addition, the predictive capabilities of grain boundary segregation diagrams are outlined. The present models of segregation kinetics are reviewed and discussed in connection with recent experiment. The last part of the paper is focussed on the most important c3nsequences of grain boundary segregation, i.e., grain boundary cohesion and fracture.

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“…For example, Wildman et al determined a few years ago the grain boundary diffusivity of Cu in Al by AES 9 and Hoffmann et al determined the volume diffusion coefficient of Sn in Cu at low temperature. 10 The problem is not just to measure mass transport but to do it accurately. In this work, we developed a new approach to estimate the atomic fraction of a component in the first layer of an inhomogeneous sample, assuming that the surface layer has a different composition to that of the bulk.…”

Section: Quantification: Estimation Of the Atomic Fraction Of Atoms Imentioning

confidence: 99%

How to measure accurately mass transport in thin films by AES

Girardeaux

Clugnet

Erdélyi

et al. 2002

Surface & Interface Analysis

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In this paper, we show that AES is a powerful technique to determine mass transport in thin films with model metal/metal thin-layer structures (for systems without any compound formation). We show the conditions where grain boundary and/or bulk diffusion coefficients can be determined accurately at unusually low temperatures by monitoring the surface segregation kinetics of an impurity through a nanocrystalline film using the Hwang-Balluffi approach (systems with total solubility), and the dissolution of ultrathin deposits in a matrix using a model based on Martin's kinetic deterministic equations (systems with total solubility).

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Determination of the diffusion coefficient of foreign atoms in metals via surface segregation

Cited by 80 publications

References 12 publications

An AES study of Sn surface segregation in Cu single crystals

An AES study of Sn surface segregation in Cu single crystals

Solute segregation at grain boundaries

How to measure accurately mass transport in thin films by AES

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