Determination of the depth of shallow implanted p+–n junctions by the four-point probe method

Abstract

A method for determining the carrier concentration profile N ( Q ) and the pf-n junction depth of boron implanted silicon using the four-point probe and stripping techniques is presented. It is found that the profile N ( Q ) and the p+-n junction depth can provide reliable information only if certain limitations are considered in detail. Automation of the process of anodic oxidation, sheet resistance measurements, and the way of obtaining the profiles N(z,i) are also briefly described. The experimental results have been compared with theoretical ones based on Gauss N G ( Q ) and Pearson IV Np (zd) distributions.

Four-point probe electrical measurements on p-n-p InP structures

“…In the present paper, four-point probe measurements are reported and analysed [12,31,39]. Although this technique is a classic and standard technique for semiconductor characterisation, its importance has increased in the present times, as it is well documented in the open literature [40][41][42][43][44][45][46][47][48][49][50].…”