2007
DOI: 10.1590/s0103-97332007000700002
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Four-point probe electrical measurements on p-n-p InP structures

Abstract: The diffusion of zinc into n-type InP has been studied by four-point probe electrical measurements on homogeneously doped crystals at 750 o C. The zinc carrier concentration in the diffused layer was approximately 3 x 10 18 cm −3 and its mobility was assumed to be about 40 cm 2 V −1 s −1. It was observed that the concentration of free carriers throughout the entire diffused region is always less than the number of introduced impurity atoms. Possible reasons are discussed to explain the observed differences. Mo… Show more

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Cited by 3 publications
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“…The properties of indium phosphide (InP) are typical of the majority of the semiconducting III-V compounds and particularly close in some aspects to those of GaAs [1]. Both materials have direct band gaps differing by about 0.1 eV and exhibit similar values for the electron and hole masses, e h m and m * * .…”
Section: Introductionmentioning
confidence: 99%
“…The properties of indium phosphide (InP) are typical of the majority of the semiconducting III-V compounds and particularly close in some aspects to those of GaAs [1]. Both materials have direct band gaps differing by about 0.1 eV and exhibit similar values for the electron and hole masses, e h m and m * * .…”
Section: Introductionmentioning
confidence: 99%