Determination of stress in silicon wafers using Raman spectroscopy

Biasio, Martin De; Neumaier, Lukas; Vollert, N.; Geier, Erika; Roesner, Malte; Hirschl, Christina; Kraft, Martin

doi:10.1117/12.2176994

Cited by 7 publications

(3 citation statements)

References 10 publications

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“…We used a Si wafer as the analyte because the silicon phonon is well known to be~520.5 cm −1 and is commonly used for spectrometer calibration. [34][35][36] This allows us to independently examine the errors in the band position of the Raman scattering and Hg-Ar emission to identify any differences in the wavenumber shift between the Hg-Ar emission lines and the Raman band. An example of a Raman spectrum from our image is shown in Figure 2.…”

Section: Temporal Dependence Of the Raman Spectramentioning

confidence: 99%

Calibration of Raman wavenumber in large Raman images using a mercury‐argon lamp

Jakubek

Fries

2020

J Raman Spectroscopy

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Raman imaging is an emerging tool for the analysis of meteorites, as it is capable of describing mineralogy, carbon composition/speciation, and crystal orientation all within a petrographic context. Adequately examining the heterogeneous composition of a meteorite often requires long image collection times on the timescale of days. However, the wavenumber calibration of the Raman spectrometer drifts over long timescales resulting in low wavenumber precision for the Raman spectra comprising a large Raman image. This decrease in wavenumber precision can compromise the analysis of geological markers that can provide important information on a meteorite sample. We examine, in detail, the change in bandwidth and wavenumber of the Raman bands and Hg–Ar emission lines in our Raman images as a function of time and laboratory temperature. To overcome the drift in calibration, we utilize a commercial WITec Raman instrument with a built‐in Hg–Ar calibration lamp to individually calibrate each spectrum in the Raman image. We show that using the Hg–Ar calibration, we can improve the wavenumber precision for the spectra in our Raman images from ~±0.15 to ~±0.05 cm−1 for Raman spectra collected over multiple days. This is important as it improves measurements of mineral chemistry, latent strain, and other features that are dependent upon accurate peak position determination. We also examine the spectral signal‐to‐noise ratio needed to minimize the wavenumber error when fitting bands to Gaussian/Lorentzian profiles. We then use our results to suggest a general method for calibrating the wavenumber of Raman spectra in large Raman images.

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Section: Temporal Dependence Of the Raman Spectramentioning

confidence: 99%

Calibration of Raman wavenumber in large Raman images using a mercury‐argon lamp

Jakubek

Fries

2020

J Raman Spectroscopy

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“…µRaman Spectroscopy. Stress measurements of the implanted samples were performed using a µRaman system and calibrated with mechanical bending test of an unprocessed 4H-SiC sample the same way as described for Si in [6]. Shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

Fisher

Esteve

Doering

et al. 2017

MSF

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In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high temperature implantation yields more uniform resistivity profiles in the implanted layer; this correlates with KOH defect decoration and TEM observations, which show that the crystal damage is much more severe in room temperature implanted samples, regardless of anneal temperature. Finally, stress determination by means of μRaman spectroscopy showed that the high temperature implantation results in lower tensile stress in the implanted layers with respect to the room temperature implantation samples.

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“…Unstrained silicon holds an equal frequency at 520.5 nm for the three degenerated Raman modes [33]. The polarization dependent is considered for the two transverse optical modes and one longitudinal mode, [34], [35] and the shift in frequency and intensity of three optical modes is by applied strain [36]. CM film samples are characterized applying reflection geometry by confocal imaging RS (Renishaw inVia) [1], with charge-coupled device detector of two detectors: silicon detector (300 nm-1100 nm) and InGaAs detector (1000 nm-1600 nm).…”

Section: Raman Spectroscopymentioning

confidence: 99%

Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

Abbas,

Hiazaa,

Jalalah

et al. 2023

Adv. Nan. Res.

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The present research addresses the synthesis of carbon materials thin films by RF-PECVD in N2/CH4 gas mixture. Carbon materials film was formed at 40/48 sccm of CH4/N2 of the total gas flow rate ratio CH4/CH4+N2 = 0.45 and 200/100 W HF/LF power at a deposition temperature of 350 oC and 1000 mTorr pressure. Then, post-annealing of carbon materials film took place at 400 oC by means of RTA under N2 flow. The formation of carbon nanostructures was investigated by scanning electron microscopy, energy dispersive X-ray, Raman spectroscopy, and atomic force microscopy, respectively. AFM shows that the films consisted of nanocrystalline grains. The surface morphology and structural characteristics of materials were studied as a gas flow function and substrate temperature. EDX results indicated the carbon presence, and Raman spectroscopy analysis revealed two broad bands: D-band 1381.64 cm−1 and G-band 1589.42 cm−1. The temperature-dependent post-annealing of carbon materials plays a key role in the graphite crystallites growth at high substrate temperatures. Our results indicate carbon materials incorporation for laser diode applications.

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Determination of stress in silicon wafers using Raman spectroscopy

Cited by 7 publications

References 10 publications

Calibration of Raman wavenumber in large Raman images using a mercury‐argon lamp

Calibration of Raman wavenumber in large Raman images using a mercury‐argon lamp

An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

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