Determination of single-pass optical gain and internal loss using a multisection device

Thomson, J.D.; Summers, Huw D.; Hulyer, Paul J.; Smowton, Peter M.; Blood, P.

doi:10.1063/1.125066

Cited by 110 publications

(57 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The spectral gain measurements in our experiment were carried out using a multi-section device technique mentioned in [11]. The gain measurements were carried out under pulsed current injection with the devices being temperature controlled and all the data taken at room temperature.…”

Section: Spectral Gain Measurements and Discussionmentioning

confidence: 99%

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers

Jain

Roberts

Ironside

2005

IEE Proc., Optoelectron.

View full text Add to dashboard Cite

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers M. Jain, J. Roberts and C.N. Ironside Abstract: Spectral gain measurements for two InGaAs-InAlGaAs multiple width quantum well structures, with inverse-configured active regions, have been presented. One structure consisted of wide quantum wells near the p-side and narrow quantum wells near the n-side of the active region. The other structure consisted of narrow quantum wells near the p-side of the active region with wider quantum wells near the n-side. It is shown that, for the same operating conditions, the structure with wide quantum wells on the p-side of the active region provided a 15% broader gain spectrum in comparison to the structure with narrow quantum wells on the p-side of the active region. The analysis of the results shows non-uniform carrier distribution across the active region of the structures, where the structure with wide quantum wells near the p-side of the active region provided 65% more gain in comparison to the structure with narrow quantum wells near the p-side of the active region. The gain distribution results have been compared with that obtained for the phosphorous quaternary structures in other literature and have shown there is some evidence to suggest that the gain distribution is more uniform in aluminium quaternary than phosphorous quaternary material.

show abstract

Section: Spectral Gain Measurements and Discussionmentioning

confidence: 99%

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers

Jain

Roberts

Ironside

2005

IEE Proc., Optoelectron.

View full text Add to dashboard Cite

show abstract

“…1. At zero net modal gain, confined material gain is equal to the internal optical losses [5]. From Fig.…”

Section: Spectral Gain Measurementsmentioning

confidence: 99%

“…The experimental method used to carry out spectral gain measurement is described elsewhere [5]. The gain measurements were carried out under pulsed current injection with the devices being temperature controlled and all the data taken at room temperature.…”

Section: Spectral Gain Measurementsmentioning

confidence: 99%

Investigation of spectrally broad gain multiple-width quantum well material for colliding pulse mode-locked operation

Jain

McDougall

Bryce³

et al. 2004

IEE Proceedings - Optoelectronics

View full text Add to dashboard Cite

The first colliding pulse mode-locked operation of devices fabricated from broad gain spectrum multiple-width quantum well material is reported. Using multiple-width quantum wells in the active region of the InGaAs/InAlGaAs material system, 35% broader gain bandwidth has been obtained in comparison to the conventional identical width quantum well material. For the colliding pulse mode-locked operation, observation made from the optical spectra showed that the multiplewidth quantum well laser provided one extra optical mode with the pulse width narrowing by 7% in comparison to the identical width quantum well laser.

show abstract

“…The spectral measurements therefore have to be done using a high resolution spectrometer in order to resolve the spectral modes and not to distort the observed contrast ratio and/or line width of the modes. Since such a high resolution spectrometer in the 1.60-1.80 µm wavelength region is not available to us we have used a measurement technique based on the analysis of ASE spectra from different lengths of amplifiers as described by (Oster et al 1997;Thomson et al 1999). By this method the gain can be calculated from the ASE spectra over a wide range of injection current densities.…”

Section: Gain Measurement Method Device Design and Fabricationmentioning

confidence: 99%

“…Under the condition that there is no optical feedback and there is no gain saturation in the amplifier, the net modal gain G of a semiconductor optical amplifier (SOA) of length L is related to its ASE output power P according to (Thomson et al 1999):…”

Section: Gain Measurement Method Device Design and Fabricationmentioning

confidence: 99%

Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers

et al. 2009

View full text Add to dashboard Cite

Small signal modal gain measurements have been performed on two-section ridge waveguide InAs/InP (100) quantum-dot amplifiers that we have fabricated with a peak gain wavelength around 1.70 µm. The amplifier structure is suitable for monolithic active-passive integration, and the wavelength region and wide gain bandwidth are of interest for integrated devices in biophotonic applications. A 65 nm blue shift of the peak wavelength in the gain spectrum has been observed with an increase in injection current density from 1,000 to 3,000 A/cm 2 . The quantum-dot amplifier gain spectra have been analyzed using a quantum-dot rate-equation model that considers only the carrier dynamics. The comparison between measured and simulated spectra shows that two effects in the quantum-dot material introduce this large blue shift in the gain spectrum. The first effect is the carrier concentration dependent state filling with carriers of the bound excited and ground states in the dots. The second effect is the decrease in carrier escape time from the dots to the wetting layer with decreasing dot size.

show abstract

Determination of single-pass optical gain and internal loss using a multisection device

Cited by 110 publications

References 13 publications

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers

Investigation of spectrally broad gain multiple-width quantum well material for colliding pulse mode-locked operation

Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers

Contact Info

Product

Resources

About