Investigation of spectrally broad gain multiple-width quantum well material for colliding pulse mode-locked operation

Jain, Manish; McDougall, S.D.; Bryce, A.C.; Ironside, C. N.

doi:10.1049/ip-opt:20040205

Cited by 1 publication

(1 citation statement)

References 14 publications

(15 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The technique of employing inverse-configured quantum wells in an active region has been used previously in various material systems to study the carrier distribution across the active region of an MQW laser [2,5,6]. These MWQW lasers are also of interest because they have been used as broad bandwidth lasers to obtain increased tuning range [7] and for modelocking to obtain decreased pulse width [8]. With our goal in mind, we employed the two MWQW structures to carry out spectral gain measurements and analyse the spectral gain data obtained from this experiment.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers

Jain

Roberts

Ironside

2005

IEE Proc., Optoelectron.

Self Cite

View full text Add to dashboard Cite

Analysis of the gain distribution across the active region of InGaAs-InAlGaAs multiple quantum well lasers M. Jain, J. Roberts and C.N. Ironside Abstract: Spectral gain measurements for two InGaAs-InAlGaAs multiple width quantum well structures, with inverse-configured active regions, have been presented. One structure consisted of wide quantum wells near the p-side and narrow quantum wells near the n-side of the active region. The other structure consisted of narrow quantum wells near the p-side of the active region with wider quantum wells near the n-side. It is shown that, for the same operating conditions, the structure with wide quantum wells on the p-side of the active region provided a 15% broader gain spectrum in comparison to the structure with narrow quantum wells on the p-side of the active region. The analysis of the results shows non-uniform carrier distribution across the active region of the structures, where the structure with wide quantum wells near the p-side of the active region provided 65% more gain in comparison to the structure with narrow quantum wells near the p-side of the active region. The gain distribution results have been compared with that obtained for the phosphorous quaternary structures in other literature and have shown there is some evidence to suggest that the gain distribution is more uniform in aluminium quaternary than phosphorous quaternary material.

show abstract